参数资料
型号: MJ21194
厂商: ON SEMICONDUCTOR
元件分类: 功率晶体管
英文描述: COMPLEMENTARY SILICON POWER TRANSISTORS
中文描述: 16 A, 250 V, NPN, Si, POWER TRANSISTOR, TO-204AA
封装: CASE 1-07, TO-3, 2 PIN
文件页数: 3/6页
文件大小: 173K
代理商: MJ21194
3
Motorola Bipolar Power Transistor Device Data
Figure 3. DC Current Gain, VCE = 20 V
Figure 4. DC Current Gain, VCE = 20 V
Figure 5. DC Current Gain, VCE = 5 V
Figure 6. DC Current Gain, VCE = 5 V
hF
IC COLLECTOR CURRENT (AMPS)
IC COLLECTOR CURRENT (AMPS)
hF
hF
IC COLLECTOR CURRENT (AMPS)
IC COLLECTOR CURRENT (AMPS)
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 7. Typical Output Characteristics
I
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 8. Typical Output Characteristics
I
PNP MJ21193
NPN MJ21194
hF
TYPICAL CHARACTERISTICS
PNP MJ21193
PNP MJ21193
NPN MJ21194
NPN MJ21194
1000
100
10
100
10
1.0
0.1
TJ = 100
°
C
25
°
C
–25
°
C
VCE = 20 V
1000
100
10
100
10
1.0
0.1
TJ = 100
°
C
25
°
C
–25
°
C
VCE = 20 V
1000
100
10
100
10
1.0
0.1
1000
100
10
100
10
1.0
0.1
TJ = 100
°
C
25
°
C
–25
°
C
VCE = 5 V
TJ = 100
°
C
25
°
C
–25
°
C
VCE = 20 V
30
25
20
15
10
5.0
0
5.0
0
10
15
20
25
35
30
25
20
15
10
0
5.0
0
10
15
20
25
5.0
1.5 A
1 A
0.5 A
IB = 2 A
TJ = 25
°
C
IB = 2 A
1.5 A
1 A
0.5 A
TJ = 25
°
C
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相关代理商/技术参数
参数描述
MJ21194G 功能描述:两极晶体管 - BJT 16A 250V 250W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
MJ21195 功能描述:两极晶体管 - BJT 16A 250V 250W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
MJ21195_06 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Silicon Power Transistors
MJ21195G 功能描述:两极晶体管 - BJT 16A 250V 250W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
MJ21196 功能描述:两极晶体管 - BJT 16A 250V 250W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2