- 您现在的位置：买卖IC网 > PDF目录98014 > MJ3000 (ON SEMICONDUCTOR) 10 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-204AA PDF资料下载
参数资料
| 型号： | MJ3000 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 功率晶体管 |
| 英文描述： | 10 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 封装： | METAL, TO-3, 2 PIN |
| 文件页数： | 12/59页 |
| 文件大小： | 355K |
| 代理商： | MJ3000 |
第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页当前第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页第31页第32页第33页第34页第35页第36页第37页第38页第39页第40页第41页第42页第43页第44页第45页第46页第47页第48页第49页第50页第51页第52页第53页第54页第55页第56页第57页第58页第59页
MJ2500 MJ2501 MJ3000 MJ3001
3–426
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(1)
MJ2500, MJ3000
(IC = 100 mAdc, IB = 0)
MJ2501, MJ3001
V(BR)CEO
60
80
—
Vdc
Collector–Emitter Leakage Current
(VEB = 60 Vdc, RBE = 1.0 k ohm)
MJ2500, MJ3000
(VEB = 80 Vdc, RBE = 1.0 k ohm)
MJ2501, MJ3001
(VEB = 60 Vdc, RBE = 1.0 k ohm, TC = 150_C)
MJ2500, MJ3000
(VEB = 80 Vdc, RBE = 1.0 k ohm, TC = 150_C)
MJ2501, MJ3001
ICER
—
1.0
5.0
mAdc
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
IEBO
—
2.0
mAdc
Collector Emitter Leakage Current (VCE = 30 Vdc, IB = 0)
MJ2500, MJ3000
(VCE = 40 Vdc, IB = 0)
MJ2501, MJ3001
ICEO
—
1.0
mAdc
ON CHARACTERISTICS(1)
DC Current Gain (IC = 5.0 Adc, VCE = 3.0 Vdc)
hFE
1000
—
—
Collector–Emitter Saturation Voltage (IC = 5.0 Adc, IB = 20 mAdc)
(IC = 10 Adc, IB = 50 mAdc)
VCE(sat)
—
2.0
4.0
Vdc
Base Emitter Voltage (IC = 5.0 Adc, VCE = 3.0 Vdc)
VBE(on)
—
3.0
Vdc
(1)Pulse Test: Pulse Width v 300 s, Duty Cycle v 2.0%.
Figure 2. DC Current Gain
IC, COLLECTOR CURRENT (AMP)
0.01 0.02
0.05
0.1
0.2
0.5
1.0
2.0
10
h
FE
,DC
C
URREN
T
GAIN
TJ = 150°C
25
°C
–55
°C
VCE = 3.0 Vdc
500
200
100
50,000
5000
20,000
2000
1000
10,000
5.0
Figure 3. Small–Signal Current Gain
f, FREQUENCY (Hz)
500
300
100
3000
h
FE
,SMALL–SIGNAL
CURRENT
GAIN
200
2000
1000
30
50
TC = 25°C
VCE = 3.0 Vdc
IC = 5.0 Adc
104
103
105
106
50
IC, COLLECTOR CURRENT (AMP)
VBE(sat) @ IC/IB = 250
V
,VOL
TAGE
(VOL
TS)
Figure 4. “On” Voltages
VCE(sat) @ IC/IB = 250
TJ = 25°C
VBE @ VCE = 3.0 V
0.01
0.2
0.5
0.05
1.0
2.0
10
5.0
3.5
2.5
2.0
1.5
1.0
0
SECONDARY BREAKDOWN LIMITED
THERMALLY LIMITED @ TC = 25°C
BONDING WIRE LIMITED
10
1.0
Figure 5. DC Safe Operating Area
7.0
2.0
10
20
100
TJ = 200°C
0.2
3.0
0.5
I C
,COLLECT
OR
CURRENT
(AMP)
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
5.0
30
70
1.0
0.1
2.0
50
3.0
5.0 7.0
MJ2500, MJ3000
MJ2501, MJ3001
0.5
3.0
0.1
0.02
0.7
0.3
There are two limitations on the power handling ability of a
transistor: junction temperature and secondary breakdown.
Safe operating area curves indicate IC – VCE limits of the
transistor that must be observed for reliable operation; e.g.,
the transistor must not be subjected to greater dissipation
than the curves indicate.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the limita-
tions imposed by secondary breakdown.
相关PDF资料 |
PDF描述 |
|---|---|
| MJ2500 | 10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-204AA |
| MJ3281A | 15 A, 200 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| MJ1302A | 15 A, 200 V, PNP, Si, POWER TRANSISTOR, TO-204AA |
| MJ410 | 5 A, 200 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| MJ413 | 10 A, 325 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MJ3001 | 功能描述:达林顿晶体管 NPN Darlington Power LTB 9-2009 RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| MJ3001 | 制造商:SPC Multicomp 功能描述:TRANSISTOR DARLINGTON TO-3 制造商:STMicroelectronics 功能描述:TRANSISTOR DARLINGTON TO-3 |
| MJ3011F | 制造商:Ohmite Mfg Co 功能描述: |
| MJ3011FE-R52 | 制造商:Ohmite Mfg Co 功能描述:Metal Film Resistors 1/8W 3.01K Ohm 1% 200 Volt |
| MJ3040 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:DARLINGTON 10 AMPERE POWER TRANSISTORS NPN SILICON |
发布紧急采购，3分钟左右您将得到回复。