参数资料
型号: MJ413
厂商: ON SEMICONDUCTOR
元件分类: 功率晶体管
英文描述: 10 A, 325 V, NPN, Si, POWER TRANSISTOR, TO-204AA
封装: METAL, TO-3, 2 PIN
文件页数: 1/59页
文件大小: 356K
代理商: MJ413
3–419
Motorola Bipolar Power Transistor Device Data
High-Voltage NPN Silicon
Transistors
. . . designed for medium–to–high voltage inverters, converters, regulators and
switching circuits.
High Voltage — VCEX = 400 Vdc
Gain Specified to 3.5 Amp
High Frequency Response to 2.5 MHz
MAXIMUM RATINGS
Rating
Symbol
MJ413
MJ423
Unit
Collector–Emitter Voltage
VCEX
400
400
Vdc
Collector–Base Voltage
VCB
400
400
Vdc
Emitter–Base Voltage
VEB
5.0
5.0
Vdc
Collector Current — Continuous
IC
10
10
Adc
Base Current
IB
2.0
2.0
Adc
Total Device Dissipation @ TC = 25_C
Derate above 25
_C
PD
125
1.0
Watts
W/
_C
Operating Junction Temperature Range
TJ
– 65 to + 150
_C
Storage Temperature Range
Tstg
– 65 to + 200
_C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
θJC
1.0
_C/W
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage* (1)
(IC = 100 mAdc, IB = 0)
V(BR)CEO(sus)
325
Vdc
Collector Cutoff Current
(VCE = 400 Vdc, VEB(off) = 1.5 Vdc)
(VCE = 400 Vdc, VEB(off) = 1.5 Vdc, TC = 125_C)
ICEX
0.25
0.5
mAdc
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
IEBO
5.0
mAdc
ON CHARACTERISTICS
DC Current Gain(1)
(IC = 0.5 Adc, VCE = 5.0 Vdc)
MJ413
(IC = 1.0 Adc, VCE = 5.0 Vdc)
MJ423
(IC = 2.5 Adc, VCE = 5.0 Vdc)
hFE
20
15
30
10
80
90
Collector–Emitter Saturation Voltage (1)
(IC = 0.5 Adc, IB = 0.05 Adc)
MJ413
(IC = 1.0 Adc, IB – 0.10 Adc)
MJ423
VCE(sat)
0.8
Vdc
Base–Emitter Saturation Voltage
(IC = 0.5 Adc, IB = 0.05 Adc)
MJ413
(IC = 1.0 Adc, IB = 0.1 Adc)
MJ423
VBE(sat)
1.25
Vdc
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 200 mAdc, VCE = 10 Vdc, f = 1.0 MHz)
fT
2.5
MHz
(1) PW
v 300 s Duty Cycle v 2.0%.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MJ413
MJ423
10 AMPERE
POWER TRANSISTORS
NPN SILICON
400 VOLTS
125 WATTS
CASE 1–07
TO–204AA
(TO–3)
REV 7
相关PDF资料
PDF描述
MJB18004D2T4 5 A, 450 V, NPN, Si, POWER TRANSISTOR
MJD127T4 8 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-252
MJD122T4 8 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-252
MJD13003-I 1.5 A, 400 V, NPN, Si, POWER TRANSISTOR
MJD13003 1.5 A, 400 V, NPN, Si, POWER TRANSISTOR
相关代理商/技术参数
参数描述
MJ420 制造商:CENTRAL 制造商全称:Central Semiconductor Corp 功能描述:Small Signal Transistors
MJ420S 制造商:CENTRAL 制造商全称:Central Semiconductor Corp 功能描述:Small Signal Transistors
MJ421 制造商:Motorola Inc 功能描述:
MJ421S 制造商:CENTRAL 制造商全称:Central Semiconductor Corp 功能描述:Small Signal Transistors
MJ4221F 制造商:Ohmite Mfg Co 功能描述: