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参数资料
| 型号： | MJB18004D2T4 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 功率晶体管 |
| 英文描述： | 5 A, 450 V, NPN, Si, POWER TRANSISTOR |
| 封装： | D2PAK-3 |
| 文件页数： | 1/16页 |
| 文件大小： | 222K |
| 代理商： | MJB18004D2T4 |
High Speed, High Gain Bipolar
NPN Power Transistor with
Integrated Collector-Emitter
Diode and Built-in Efficient
Antisaturation Network
D2PAK For Surface Mount
The MJB18004D2T4 is state–of–art High Speed High gain Bipolar
transistor (H2BIP). High dynamic characteristics and lot to lot
minimum spread (
±150 ns on storage time) make it ideally suitable for
light ballast applications. Therefore, there is no need to guarantee an
hFE window.
Main features:
Low Base Drive Requirement
High Peak DC Current Gain (55 Typical) @ I
C = 100 mA
Extremely Low Storage Time Min/Max Guarantees Due to the
H2BIP Structure which Minimizes the Spread
Integrated Collector–Emitter Free Wheeling Diode
Fully Characterized and Guaranteed Dynamic V
CE(sat)
“6 Sigma” Process Providing Tight and Reproductible Parameter
Spreads
It’s characteristics make it also suitable for PFC application.
ON Semiconductort
Semiconductor Components Industries, LLC, 2001
June, 2001 – Rev. 0
1
Publication Order Number:
MJB18004D2T4/D
MJB18004D2T4
POWER TRANSISTORS
5 AMPERES
1000 VOLTS
75 WATTS
D2PAK
CASE 418B
STYLE 1
MARKING DIAGRAM
Y
= Year
WW
= Work Week
YWW
MJB
18004D2
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MJB30230301 | 制造商:LG Corporation 功能描述:Stopper,Door |
| MJB32864101 | 制造商:LG Corporation 功能描述:Stopper,Roller |
| MJB32B | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:PNP SILICON POWER TRANSISTOR |
| MJB32BT4 | 功能描述:两极晶体管 - BJT RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJB36873201 | 制造商:LG Corporation 功能描述:Stopper,Door |
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