参数资料
型号: MJB18004D2T4
厂商: ON SEMICONDUCTOR
元件分类: 功率晶体管
英文描述: 5 A, 450 V, NPN, Si, POWER TRANSISTOR
封装: D2PAK-3
文件页数: 3/16页
文件大小: 222K
代理商: MJB18004D2T4
MJB18004D2T4
http://onsemi.com
11
TYPICAL CHARACTERISTICS
POWER
DERA
TING
F
ACT
OR
Figure 30. Forward Bias Power Derating
There are two limitations on the power handling ability
of a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC–VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to
greater dissipation than the curves indicate. The data of
Figure 28 is based on TC = 25°C; TJ(pk) is variable de-
pending on power level. Second breakdown pulse limits
are valid for duty cycles to 10% but must be derated when
TC > 25°C. Second breakdown limitations do not derate
the same as thermal limitations. Allowable current at the
voltages shown on Figure 28 may be found at any case
temperature by using the appropriate curve on Figure 30.
TJ(pk) may be calculated from the data in Figure 31. At
any case temperatures, thermal limitations will reduce the
power that can be handled to values less than the limita-
tions imposed by second breakdown. For inductive loads,
high voltage and current must be sustained simultaneously
during turn–off with the base–to–emitter junction reverse
biased. The safe level is specified as a reverse–biased safe
operating area (Figure 29). This rating is verified under
clamped conditions so that the device is never subjected to
an avalanche mode.
TC, CASE TEMPERATURE (°C)
1.0
0.8
0.6
0.4
0.2
0
160
140
120
100
80
60
40
20
SECOND
BREAKDOWN
DERATING
THERMAL
DERATING
Figure 31. Typical Thermal Response (ZθJC(t)) for MJB18004D2T4
TYPICAL THERMAL RESPONSE
1
0.01
10
0.1
0.01
t, TIME (ms)
0.1
1
100
1000
r(t)
,TRANSIENT
THERMAL
RESIST
ANCE
(NORMALIZED)
RθJC(t) = r(t) RθJC
RθJC = 2.5°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) RθJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.05
SINGLE PULSE
0.5
0.2
0.1
0.02
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