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参数资料
| 型号： | MJD112-BP |
| 厂商： | MICRO COMMERCIAL COMPONENTS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 2000 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | ROHS COMPLIANT, PLASTIC, DPAK-3 |
| 文件页数： | 3/3页 |
| 文件大小： | 121K |
| 代理商： | MJD112-BP |
MCC
Revision: 1
2008/09/10
TM
Micro Commercial Components
www.mccsemi.com
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Ordering Information
Device
Packing
(Part Number)-BP
Bulk;50pcs/Tube
3
相关PDF资料 |
PDF描述 |
|---|---|
| MJD112-I | 2 A, 100 V, NPN, Si, POWER TRANSISTOR |
| MJD112-T1 | 2 A, 100 V, NPN, Si, POWER TRANSISTOR |
| MJD112-1 | 2 A, 100 V, NPN, Si, POWER TRANSISTOR |
| MJD112-TP | 2000 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| MJD112T4 | 2 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-252 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MJD112G | 功能描述:达林顿晶体管 2A 100V Bipolar Power NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| MJD112G | 制造商:ON Semiconductor 功能描述:Bipolar Transistor |
| MJD112L | 制造商:KEC 制造商全称:KEC(Korea Electronics) 功能描述:EPITAXIAL PLANAR NPN TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.) |
| MJD112RL | 功能描述:达林顿晶体管 2A 100V Bipolar RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| MJD112RLG | 功能描述:达林顿晶体管 2A 100V Bipolar Power NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
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