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参数资料
| 型号： | MJD112-TP |
| 厂商： | MICRO COMMERCIAL COMPONENTS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 2000 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | ROHS COMPLIANT, PLASTIC, DPAK-3 |
| 文件页数： | 1/3页 |
| 文件大小： | 377K |
| 代理商： | MJD112-TP |
Silicon
NPN epitaxial planer
Transistors
Features
MaximumRatings@25OCUnlessOtherwiseSpecified
Symbol
Rating
Unit
VCEO
Collector-Emitter Voltage
100
V
VCBO
Collector-Base Voltage
100
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
2
A
PC
Collector Dissipation
1.0
W
TJ
Operating Junction Temperature
150
TSTG
Storage Temperature
-55 to +150
ElectricalCharacteristics@25OCUnlessOtherwiseSpecified
Symbol
Parameter
Min
Typ
Max
Units
V(BR)CEO
Collector-Emitter Breakdown Voltage
(IC=30mAdc, IB=0)
100
---
Vdc
V(BR)CBO
Collector-Base Breakdown Voltage
(IC=1mAdc, IE=0)
100
---
Vdc
V(BR)EBO
Collector-Emitter Breakdown Voltage
(IE=5mAdc, IC=0)
5
---
Vdc
ICBO
Collector Cutoff Current
(VCB=100Vdc, IE=0)
---
20
nAdc
IEBO
Emitter Cutoff Current
(VEB=5Vdc, IC=0)
---
2
mAdc
hFE
DC Current Gain
(IC=500mAdc, VCE=3Vdc)
VCE(sat)
Collector-Emitter Saturation Voltage
(IC=2Adc, IB=8mAdc)
---
2
Vdc
Cob
Output Capacitance
(VCB=10Vdc, f=0.1MHz, IE=0)
---
100
pF
Revision:
A
20
11/01/01
omponents
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Micro Commercial Components
www.mccsemi.com
1 of 3
MJD112
ICEO
Collector emitter cutoff Current
(VCE=50Vdc, IE=0)
---
20
nAdc
(IC=2Adc, VCE=3Vdc)
(IC=4Adc, IB=40mAdc)
---
3
Vdc
---
VBE
Base-Emitter Saturation Voltage
(IC=2Adc, VCE=3Vdc )
---
2.8
Vdc
500
---
1000
---
12000
(IC=4Adc, VCE=3Vdc)
200
---
Transition frequency
(VCE=10Vdc, f=1MHz, IC=0.75A)
25
MHz
High DC Current Gain
Lead Free Finish/RoHS Compliant("P" Suffix designates
RoHS Compliant. See ordering information)
Built-in a damper diode at E-C
Maximum Thermal Resistance: 125
oC/W Junction to Ambient
fT
DIMENSIONS
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
0.087
0.094
2.20
2.40
B
0.000
0.005
0.00
0.13
C
0.026
0.034
0.66
0.86
D
0.018
0.023
0.46
0.58
E
0.256
0.264
6.50
6.70
F
0.201
0.215
5.10
5.46
G
0.190
4.83
H
0.236
0.244
6.00
6.20
J
0.386
0.409
9.80
10.40
PIN 1.
BASE
PIN 2.
COLLECTOR
PIN 3.
EMITTER
INCHES
O
0.043
0.051
1.10
1.30
Q
A
D
B
L
G
V
K
C
I
J
H
O
M
F
1
2
3
I
0.086
0.094
2.18
2.39
K
0.114
2.90
L
0.055
0.067
1.40
1.70
M
0.063
1.60
Q
0.000
0.012
0.00
0.30
V
0.211
5.35
DPAK
E
Epoxy meets UL 94 V-0 flammability rating
Moisture Sensitivity Level 1
相关PDF资料 |
PDF描述 |
|---|---|
| MJD112T4 | 2 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-252 |
| MJD117T4 | 2 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-252 |
| MJD112 | 2 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-252 |
| MJD117 | 2 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-252 |
| MJD112 | 2000 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MJD117 | 功能描述:达林顿晶体管 2A 100V Bipolar RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| MJD117-001 | 功能描述:达林顿晶体管 2A 100V Bipolar RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| MJD117-001G | 制造商:ON Semiconductor 功能描述:Trans Darlington PNP 100V 2A 3-Pin(3+Tab) DPAK-3 Rail |
| MJD117-1G | 功能描述:达林顿晶体管 2A 100V Bipolar Power PNP RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| MJD117G | 功能描述:达林顿晶体管 2A 100V Bipolar Power PNP RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
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