参数资料
型号: MJD117T4
厂商: STMICROELECTRONICS
元件分类: 功率晶体管
英文描述: 2 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-252
封装: DPAK-3
文件页数: 1/10页
文件大小: 382K
代理商: MJD117T4
January 2010
Doc ID 3540 Rev 3
1/10
10
MJD112
MJD117
Complementary power Darlington transistors
Features
Good hFE linearity
High fT frequency
Monolithic Darlington configuration with
integrated antiparallel collector-emitter diode
Application
Linear and switching industrial equipment
Description
The devices are manufactured in planar
technology with “base island” layout and
monolithic Darlington configuration.
.
Figure 1.
Internal schematic diagram
TO-252
1
3
TAB
(DPAK)
R1 typ. = 15 kΩ
R2 typ. = 100 Ω
Table 1.
Device summary
Order codes
Marking
Polarity
Package
Packaging
MJD112T4
MJD112
NPN
DPAK
Tape and reel
MJD117T4
MJD117
PNP
DPAK
Tape and reel
相关PDF资料
PDF描述
MJD112 2 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-252
MJD117 2 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-252
MJD112 2000 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR
MJD117-1 2 A, 100 V, PNP, Si, POWER TRANSISTOR
MJD117-T1 2 A, 100 V, PNP, Si, POWER TRANSISTOR
相关代理商/技术参数
参数描述
MJD117T4G 功能描述:达林顿晶体管 2A 100V Bipolar Power PNP RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel
MJD117TF 功能描述:达林顿晶体管 PNP Silicon Darl RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel
MJD122 功能描述:达林顿晶体管 8A 100V Bipolar RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel
MJD122_05 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Complementary Darlington Power Transistor
MJD122_07 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:nullLow voltage power Darlington transistor