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参数资料
| 型号： | MJD117T4 |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | 功率晶体管 |
| 英文描述： | 2 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-252 |
| 封装： | DPAK-3 |
| 文件页数： | 4/10页 |
| 文件大小： | 382K |
| 代理商： | MJD117T4 |
MJD112, MJD117
Electrical characteristics
Doc ID 3540 Rev 3
3/10
2
Electrical characteristics
Tcase = 25 °C; unless otherwise specified.
Note:
For PNP types voltage and current values are negative.
Table 4.
Electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ICEV
Collector cut-off current
(VBE = -1.5 V)
VCE = 80 V
VCE = 80 V, Tc = 125 °C
-
10
0.5
A
mA
ICBO
Collector cut-off current
(IE = 0)
VCB = 80 V
VCB = 100 V
-
10
20
A
ICEO
Collector cut-off current
(IB = 0)
VCE = 50 V
-
20
A
IEBO
Emitter cut-off current
(IC = 0)
VEB = 5 V
-
2
mA
VCEO(sus)
(1)
1.
Pulse test: pulse duration
≤ 300 s, duty cycle ≤ 2 %
Collector-emitter
sustaining voltage (IB = 0)
IC = 30 mA
100
-
V
VCE(sat)
(1)
Collector-emitter saturation
voltage
IC = 2 A
IB = 8 mA
-
2
V
IC = 4 A
IB = 40 mA
-
3
VBE(sat)
(1)
Base-emitter saturation
voltage
IC = 4 A
IB = 40 mA
-
4
V
VBE(on)
Base-emitter on voltage
IC = 2 A
VCE = 3 V
-
2.8
V
hFE
(1)
DC current gain
IC = 0.5 A_ _ VCE = 3 V
500
-
IC = 2 A_
VCE = 3 V
1000
-
12000
IC = 4 A_ _
VCE = 3 V
200
-
fT
Transition frequency
IC = 0.75 A_
VCE = 10 V
f = 1 MHz
25
-
MHz
CCBO
Collector base capacitance
(IE = 0)
VCB = 10 V
f = 0.1 MHz
for MJD112
for MJD117
-
100
200
pF
相关PDF资料 |
PDF描述 |
|---|---|
| MJD112 | 2 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-252 |
| MJD117 | 2 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-252 |
| MJD112 | 2000 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| MJD117-1 | 2 A, 100 V, PNP, Si, POWER TRANSISTOR |
| MJD117-T1 | 2 A, 100 V, PNP, Si, POWER TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MJD117T4G | 功能描述:达林顿晶体管 2A 100V Bipolar Power PNP RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| MJD117TF | 功能描述:达林顿晶体管 PNP Silicon Darl RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| MJD122 | 功能描述:达林顿晶体管 8A 100V Bipolar RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| MJD122_05 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Complementary Darlington Power Transistor |
| MJD122_07 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:nullLow voltage power Darlington transistor |
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