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参数资料
| 型号： | MJD122-I |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | 8 A, 100 V, NPN, Si, POWER TRANSISTOR |
| 封装： | IPAK-3 |
| 文件页数： | 1/5页 |
| 文件大小： | 51K |
| 代理商： | MJD122-I |
2001 Fairchild Semiconductor Corporation
Rev. A2, June 2001
MJD122
NPN Silicon Darlington Transistor
Absolute Maximum Ratings T
C=25°C unless otherwise noted
Electrical Characteristics T
C=25°C unless otherwise noted
* Pulse Test: PW
≤300s, Duty Cycle≤2%
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current (DC)
8
A
ICP
Collector Current (Pulse)
16
A
IB
Base Current
120
mA
PC
Collector Dissipation (TC=25°C)
20
W
Collector Dissipation (Ta=25°C)
1.75
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
- 65 ~ 150
°C
Symbol
Parameter
Test Condition
Min.
Max.
Units
VCEO(sus)
*Collector-Emitter Sustaining Voltage
IC = 30mA, IB = 0
100
V
ICEO
Collector Cut-off Current
VCE = 50V, IB =0
10
A
ICBO
Collector Cut-off Current
VCB = 100V, IE = 0
10
A
IEBO
Emitter Cut-off Current
VEB = 5V, IC = 0
2
mA
hFE
*DC Current Gain
VCE = 4V, IC = 4A
VCE = 4V, VEB = 8A
1000
100
12K
VCE(sat)
*Collector-Emitter Saturation Voltage
IC = 4A, IB = 16mA
IC = 8A, IB = 80mA
2
4
V
VBE(sat)
*Base-Emitter Saturation Voltage
IC = 8A, IB = 80mA
4.5
V
VBE(on)
*Base-Emitter ON Voltage
VCE = 4V, IC = 4A
2.8
V
Cob
Output Capacitance
VCB = 10V, IE = 0
f= 0.1MHz
200
pF
MJD122
D-PAK for Surface Mount Applications
High DC Current Gain
Built-in a Damper Diode at E-C
Lead Formed for Surface Mount Applications (No Suffix)
Straight Lead (I-PAK, “ - I “ Suffix)
Electrically Similar to Popular TIP122
Complement to MJD127
Equivalent Circuit
B
E
C
R1
R2
R18k
R20.12k
1.Base
2.Collector
3.Emitter
D-PAK
I-PAK
11
相关PDF资料 |
PDF描述 |
|---|---|
| MJD1222 | 3000 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| MJD122 | 8 A, 100 V, NPN, Si, POWER TRANSISTOR |
| MJD127-T1 | 8 A, 100 V, PNP, Si, POWER TRANSISTOR |
| MJD127-1 | 8 A, 100 V, PNP, Si, POWER TRANSISTOR |
| MJD127-TP | POWER TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MJD122T4 | 功能描述:达林顿晶体管 NPN Power Darlington RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| MJD122T4G | 功能描述:达林顿晶体管 8A 100V Bipolar Power NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| MJD122T4G | 制造商:ON Semiconductor 功能描述:DARLINGTON TRANSISTOR NPN 100V D-PAK |
| MJD122T4G-CUT TAPE | 制造商:ON 功能描述:MJD Series 100 V 8 A NPN Complementary Darlington Power Transistor - TO-252 |
| MJD122TF | 功能描述:达林顿晶体管 NPN Sil Darl Trans RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
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