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参数资料
| 型号： | MJD200-1 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 功率晶体管 |
| 英文描述： | 5 A, 25 V, NPN, Si, POWER TRANSISTOR |
| 封装： | PLASTIC, CASE 369-07, 3 PIN |
| 文件页数： | 1/8页 |
| 文件大小： | 112K |
| 代理商： | MJD200-1 |
Complementary
Plastic Power Transistors
NPN/PNP Silicon DPAK For Surface
Mount Applications
. . . designed for low voltage, low–power, high–gain audio amplifier
applications.
Collector–Emitter Sustaining Voltage —
VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc
High DC Current Gain —
hFE = 70 (Min) @ IC = 500 mAdc
= 45 (Min) @ IC = 2 Adc
= 10 (Min) @ IC = 5 Adc
Lead Formed for Surface Mount Applications in Plastic Sleeves
(No Suffix)
Straight Lead Version in Plastic Sleeves (“–1” Suffix)
Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix)
Low Collector–Emitter Saturation Voltage —
VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc
= 0.75 Vdc (Max) @ IC = 2.0 Adc
High Current–Gain — Bandwidth Product —
fT = 65 MHz (Min) @ IC = 100 mAdc
Annular Construction for Low Leakage —
ICBO = 100 nAdc @ Rated VCB
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Base Voltage
VCB
40
Vdc
Collector–Emitter Voltage
VCEO
25
Vdc
Emitter–Base Voltage
VEB
8
Vdc
Collector Current — Continuous
Peak
IC
5
10
Adc
Base Current
IB
1
Adc
Total Device Dissipation @ TC = 25_C
Derate above 25
_C
PD
12.5
0.1
Watts
W/
_C
Total Device Dissipation @ TA = 25_C*
Derate above 25
_C
PD
1.4
0.011
Watts
W/
_C
Operating and Storage Junction
Temperature Range
TJ, Tstg
–65 to +150
_C
ON Semiconductort
Semiconductor Components Industries, LLC, 2001
November, 2001 – Rev. 4
1
Publication Order Number:
MJD200/D
MJD200
MJD210
CASE 369A–13
SILICON
POWER TRANSISTORS
5 AMPERES
25 VOLTS
12.5 WATTS
CASE 369–07
MINIMUM PAD SIZES
RECOMMENDED FOR
SURFACE MOUNTED
APPLICATIONS
NPN
PNP
0.243 6.172
0.063 1.6
0.1
18
3.0
0.100 2.54
0.165 4.191
0.190 4.826
inches
mm
相关PDF资料 |
PDF描述 |
|---|---|
| MJD210I | 5 A, 25 V, PNP, Si, POWER TRANSISTOR |
| MJD2955-I | 10 A, 60 V, PNP, Si, POWER TRANSISTOR |
| MJD29C-1 | 1 A, 100 V, NPN, Si, POWER TRANSISTOR |
| MJD29-1 | 1 A, 40 V, NPN, Si, POWER TRANSISTOR |
| MJD29-T1 | 1 A, 40 V, NPN, Si, POWER TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MJD200G | 功能描述:两极晶体管 - BJT 5A 25V 12.5W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJD200G | 制造商:ON Semiconductor 功能描述:RF BIPOLAR TRANSISTOR |
| MJD200RL | 功能描述:两极晶体管 - BJT 5A 25V 12.5W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJD200RLG | 功能描述:两极晶体管 - BJT 5A 25V 12.5W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJD200T4 | 功能描述:两极晶体管 - BJT 5A 25V 12.5W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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