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参数资料
| 型号： | MJD210I |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | 5 A, 25 V, PNP, Si, POWER TRANSISTOR |
| 封装： | IPAK-3 |
| 文件页数： | 1/6页 |
| 文件大小： | 76K |
| 代理商： | MJD210I |
2001 Fairchild Semiconductor Corporation
Rev. A2, June 2001
MJD210
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings T
C=25°C unless otherwise noted
Electrical Characteristics T
C=25°C unless otherwise noted
* Pulse Test: PW
≤300s, Duty Cycle≤2%
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
- 40
V
VCEO
Collector-Emitter Voltage
- 25
V
VEBO
Emitter-Base Voltage
- 8
V
IC
Collector Current (DC)
- 5
A
ICP
Collector Peck Current (Pulse)
- 10
A
IB
Base Current
- 1
A
PC
Collector Dissipation (TC = 25°C)
12.5
W
Collector Dissipation (Ta = 25°C)
1.4
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
- 65 ~ 150
°C
Symbol
Parameter
Test Condition
Min.
Max.
Units
VCEO(sus)
* Collector-Emitter Sustaining Voltage
IC = - 10mA, IB = 0
-25
V
ICBO
Collector Cut-off Current
VCB = - 40V, IE = 0
-100
nA
IEBO
Emitter Cut-off Current
VEBO = - 8V, IC = 0
-100
nA
hFE
* DC Current Gain
VCE = - 1V, IC = - 500mA
VCE = - 1V, IC = - 2A
VCE = - 2V, IC = - 5A
70
45
10
180
VCE(sat)
* Collector-Emitter Saturation Voltage
IC = - 500mA, IB= - 50mA
IC = - 2A, IB = - 200mA
IC = - 5A, IB = - 1A
-0.3
-0.75
-1.8
V
VBE(sat)
* Base-Emitter Saturation Voltage
IC = - 5A, IB = - 1A
-2.5
V
VBE(on)
* Base-Emitter ON Voltage
VCE = - 1V, IC = - 2A
-1.6
V
fT
Current Gain Bandwidth Product
VCE = - 10V, IC = - 100mA
65
MHz
Cob
Output Capacitance
VCB = - 10V, IE = 0, f = 0.1MHz
120
pF
MJD210
D-PAK for Surface Mount Applications
High DC Current Gain
Low Collector Emitter Saturation Voltage
Lead Formed for Surface Mount Applications (No Suffix)
Straight Lead (I-PAK, “ - I “ Suffix)
1.Base
2.Collector
3.Emitter
D-PAK
I-PAK
11
相关PDF资料 |
PDF描述 |
|---|---|
| MJD2955-I | 10 A, 60 V, PNP, Si, POWER TRANSISTOR |
| MJD29C-1 | 1 A, 100 V, NPN, Si, POWER TRANSISTOR |
| MJD29-1 | 1 A, 40 V, NPN, Si, POWER TRANSISTOR |
| MJD29-T1 | 1 A, 40 V, NPN, Si, POWER TRANSISTOR |
| MJD29C-T1 | 1 A, 100 V, NPN, Si, POWER TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MJD210-I | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:D-PAK for Surface Mount Applications |
| MJD210L-TM3-T | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS |
| MJD210L-TN3-R | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS |
| MJD210L-TN3-T | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS |
| MJD210RL | 功能描述:两极晶体管 - BJT 5A 25V 12.5W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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