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参数资料
| 型号： | MJD210I |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | 5 A, 25 V, PNP, Si, POWER TRANSISTOR |
| 封装： | IPAK-3 |
| 文件页数： | 2/6页 |
| 文件大小： | 76K |
| 代理商： | MJD210I |
2001 Fairchild Semiconductor Corporation
MJD210
Rev. A2, June 2001
Typical Characteristics
Figure 1. DC current Gain
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 3. Collector Output Capacitance
Figure 4. Turn On Time
Figure 5. Turn Off Time
Figure 6. Safe Operating Area
-0.01
-0.1
-1
-10
1
10
100
1000
VCE=-1V
VCE=-2V
h
FE
,DC
C
URRE
NT
G
A
IN
IC[A], COLLECTOR CURRENT
-0.01
-0.1
-1
-10
-0.01
-0.1
-1
-10
IC=10IB
VBE(sat)
VCE(sat)
V
CE
(s
a
t),
V
BE
(s
a
t)
[V
],
SAT
U
R
AT
IO
N
VO
L
T
AG
E
IC[A], COLLECTOR CURRENT
-0.1
-1
-10
-100
1
10
100
1000
C
ob
[pF
],
C
A
P
A
CI
T
A
NCE
VCB[V], COLLECTOR BASE VOLTAGE
-0.01
-0.1
-1
-10
0.01
0.1
1
10
tD
tR
VCC=-30V
IC=10IB
t R
,t
D
[n
s],
T
URN
ON
T
IME
IC[A], COLLECTOR CURRENT
-0.01
-0.1
-1
-10
10
100
1000
tF
tSTG
VCC=-30V
IC=10IB
IB1=IB2
t ST
G
,t
F[n
s],
T
URN
O
F
T
IM
E
IC[A], COLLECTOR CURRENT
-0.1
-1
-10
-100
-0.01
-0.1
-1
-10
-100
DC
5m
s
1m
s
50
0s
100m
σ
I C
[A],
CO
L
ECT
O
R
CU
RRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
相关PDF资料 |
PDF描述 |
|---|---|
| MJD2955-I | 10 A, 60 V, PNP, Si, POWER TRANSISTOR |
| MJD29C-1 | 1 A, 100 V, NPN, Si, POWER TRANSISTOR |
| MJD29-1 | 1 A, 40 V, NPN, Si, POWER TRANSISTOR |
| MJD29-T1 | 1 A, 40 V, NPN, Si, POWER TRANSISTOR |
| MJD29C-T1 | 1 A, 100 V, NPN, Si, POWER TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MJD210-I | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:D-PAK for Surface Mount Applications |
| MJD210L-TM3-T | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS |
| MJD210L-TN3-R | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS |
| MJD210L-TN3-T | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS |
| MJD210RL | 功能描述:两极晶体管 - BJT 5A 25V 12.5W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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