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参数资料
| 型号： | MJD210I |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | 5 A, 25 V, PNP, Si, POWER TRANSISTOR |
| 封装： | IPAK-3 |
| 文件页数： | 6/6页 |
| 文件大小： | 76K |
| 代理商： | MJD210I |
Product Folder - Fairchild P/N MJD210 - PNP Epitaxial Silicon Transistor
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MJD210
PNP Epitaxial Silicon Transistor
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Contents
Features
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High DC Current Gain
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Low Collector Emitter Saturation
Voltage
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Lead Formed for Surface Mount
Applications(No Suffix)
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Straight Lead (1. PAK"-1"Suffix)
Applications
D-PAK for Surface Mount
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Datasheet
This pagePrint version
Product status/pricing/packaging
Product
Product status
Package type
Leads
Packing method
MJD210TF
Full Production
TO-252(DPAK)
2
TAPE REEL
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file:///C|/shj/MJD210.html [Jul-26-2002 3:11:45 PM]
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相关PDF资料 |
PDF描述 |
|---|---|
| MJD2955-I | 10 A, 60 V, PNP, Si, POWER TRANSISTOR |
| MJD29C-1 | 1 A, 100 V, NPN, Si, POWER TRANSISTOR |
| MJD29-1 | 1 A, 40 V, NPN, Si, POWER TRANSISTOR |
| MJD29-T1 | 1 A, 40 V, NPN, Si, POWER TRANSISTOR |
| MJD29C-T1 | 1 A, 100 V, NPN, Si, POWER TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MJD210-I | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:D-PAK for Surface Mount Applications |
| MJD210L-TM3-T | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS |
| MJD210L-TN3-R | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS |
| MJD210L-TN3-T | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS |
| MJD210RL | 功能描述:两极晶体管 - BJT 5A 25V 12.5W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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