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参数资料
| 型号： | MJD210T4 |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | 功率晶体管 |
| 英文描述： | 5 A, 25 V, PNP, Si, POWER TRANSISTOR, TO-252 |
| 封装： | TO-252, DPAK-3 |
| 文件页数： | 1/4页 |
| 文件大小： | 48K |
| 代理商： | MJD210T4 |
MJD200
MJD210
COMPLEMENTARY SILICON POWER TRANSISTORS
s
STM PREFERRED SALESTYPES
s
COMPLEMENTARY PNP - NPN DEVICES
s
SURFACE-MOUNTING TO-252 (DPAK)
POWER PACKAGE IN TAPE & REEL
(SUFFIX T4)
APPLICATIONS
s
AUDIO AMPLIFIERS
DESCRIPTION
The MJD200 is an Epitaxial-Base NPN transistor
designed for low voltage, low power, high gain,
audio amplifier applications.
The complementary PNP type is MJD210.
INTERNAL SCHEMATIC DIAGRAM
June 1998
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
NPN
MJD200
PNP
MJD210
VCBO
Collector-Base Voltage (IE = 0)
40
V
VCEO
Collector-Emitter Voltage (IB = 0)
25
V
VEBO
Emitter-Base Voltage (IC = 0)
8
V
IC
Collector Current
5
A
ICM
Collector Peak Current
10
A
Ptot
Total Power Dissipation at Tcase
≤ 25 oC
12.5
W
Tstg
Storage Temperature
-65 to 150
oC
Tj
Max Operating Junction Temperature
150
oC
For PNP types voltage and current values are negative.
DPAK
TO-252
(Suffix "T4")
1
3
1/4
相关PDF资料 |
PDF描述 |
|---|---|
| MJD2955 | 10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-252 |
| MJD3055T4 | 10 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-252AA |
| MJD3055 | 10 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-252 |
| MJD2955T4 | 10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-252AA |
| MJD29C-I | 1 A, 100 V, NPN, Si, POWER TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MJD210-T4 | 制造商:ON Semiconductor 功能描述: |
| MJD210T4G | 功能描述:两极晶体管 - BJT 5A 25V 12.5W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJD210TF | 功能描述:两极晶体管 - BJT PNP Si Transistor Epitaxial RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJD243 | 功能描述:两极晶体管 - BJT 4A 100V 12.5W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJD243_07 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Complementary Silicon Plastic Power Transistor DPAK-3 for Surface Mount Applications |
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