参数资料
型号: MJD2955
厂商: STMICROELECTRONICS
元件分类: 功率晶体管
英文描述: 10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-252
封装: DPAK-3
文件页数: 1/6页
文件大小: 188K
代理商: MJD2955
MJD2955
MJD3055
COMPLEMENTARY POWER TRANSISTORS
s
STMicroelectronics PREFERRED
SALESTYPES
s
SURFACE-MOUNTING TO-252 (DPAK)
POWER PACKAGE IN TAPE & REEL
(SUFFIX "T4")
s
ELECTRICALLY SIMILAR TO MJE2955T
AND MJE3055T
APPLICATIONS
s
GENERAL PURPOSE SWITCHING AND
AMPLIFIER
DESCRIPTION
The
MJD2955
and
MJD3055
form
complementary
PNP-NPN
pairs.
They
are
manufactured using Epitaxial Base technology for
cost-effective performance.
INTERNAL SCHEMATIC DIAGRAM
February 2002
1
3
DPAK
TO-252
(Suffix "T4")
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
NPN
MJD3055
PNP
MJD2955
VCBO
Collector-Base Voltage (IE = 0)
70
V
VCEO
Collector-Emitter Voltage (IB = 0)
60
V
VEBO
Emitter-Base Voltage (IC = 0)
5
V
IC
Collector Current
10
A
IB
Base Current
6
A
Ptot
Total Dissipation at Tc = 25
o C20
W
Tstg
Storage Temperature
-65 to 150
o C
Tj
Max. Operating Junction Temperature
150
o C
For PNP type voltage and current values are negative.
1/6
相关PDF资料
PDF描述
MJD3055T4 10 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-252AA
MJD3055 10 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-252
MJD2955T4 10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-252AA
MJD29C-I 1 A, 100 V, NPN, Si, POWER TRANSISTOR
MJD29-I 1 A, 40 V, NPN, Si, POWER TRANSISTOR
相关代理商/技术参数
参数描述
MJD2955_02 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:COMPLEMENTARY POWER TRANSISTORS
MJD2955_06 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Complementary Power Transistors DPAK For Surface Mount Applications
MJD2955_11 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Complementary Power Transistors
MJD2955-001 功能描述:两极晶体管 - BJT 10A 60V 20W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
MJD2955-001G 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Complementary Power Transistors DPAK For Surface Mount Applications