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参数资料
| 型号： | MJD31TF |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | 3 A, 40 V, NPN, Si, POWER TRANSISTOR, TO-252 |
| 封装： | DPAK-3 |
| 文件页数： | 2/7页 |
| 文件大小： | 82K |
| 代理商： | MJD31TF |
2001 Fairchild Semiconductor Corporation
Rev. A2, June 2001
MJD31/
31C
Typical Characteristics
Figure 1. DC current Gain
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 3. Collector Capacitance
Figure 4. Turn On Time
Figure 5. Turn Off Time
Figure 6. Safe Operating
0.01
0.1
1
10
1
10
100
1000
V
CE = 2V
h
FE
,DC
C
URRENT
GAI
N
I
C[A], COLLECTOR CURRENT
1E-3
0.01
0.1
1
10
0.01
0.1
1
10
IC = 10 IB
VCE(sat)
VBE(sat)
V
BE
(s
a
t)
,V
CE
(s
a
t)
[V]
,SA
TURATI
O
N
VO
L
T
AG
E
IC[A], COLLECTOR CURRENT
0.1
1
10
100
1
10
100
1000
C
ob
[pF
],
C
A
P
A
CI
T
A
NCE
VCB[V], COLLECTOR BASE VOLTAGE
0.01
0.1
1
10
0.1
1
t
R, VCC=30V
t
R, VCC=10V
t
C
= 10.I
B
t
D, VBE(off)=2V
t R
,t
D
[
s],
T
URN
ON
T
IM
E
I
C[A], COLLECTOR CURRENT
0.01
0.1
1
10
0.1
1
tSTG
tF, VCC=30V
tC = 10.IB
tF, VCC(off)=10V
t F
,t
ST
G
[
s
],
TU
R
N
O
FF
TI
ME
IC[A], COLLECTOR CURRENT
1
10
100
1000
0.01
0.1
1
10
31
100
s
500
s
31
C
1m
s
DC
I
CP
(max)
I
C(max)
I C
[A
],
CO
L
E
CT
O
R
CURR
E
N
T
V
CE[V], COLLECTOR-EMITTER VOLTAGE
相关PDF资料 |
PDF描述 |
|---|---|
| MJD32-I | 3 A, 40 V, PNP, Si, POWER TRANSISTOR |
| MJD32C-I | 3 A, 100 V, PNP, Si, POWER TRANSISTOR |
| MJD32BT4 | 3 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-252AA |
| MJD31BT4 | 3 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-252AA |
| MJD32CT4-A | 3 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-252AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MJD32 | 制造商:Motorola Inc 功能描述: |
| MJD32/32C | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:General Purpose Amplifier Low Speed Switching Applications |
| MJD32-1 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:SILICON POWER TRANSISTORS 3 AMPERES 40 AND 100 VOLTS 15 WATTS |
| MJD32B | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:COMPLEMENTARY SILICON POWER TRANSISTORS |
| MJD32BT4 | 功能描述:两极晶体管 - BJT PNP Gen Pur Switch RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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