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参数资料
| 型号： | MJD350T4 |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | 功率晶体管 |
| 英文描述： | 0.5 A, 300 V, PNP, Si, POWER TRANSISTOR, TO-252AA |
| 封装： | TO-252, DPAK-3 |
| 文件页数： | 1/5页 |
| 文件大小： | 503K |
| 代理商： | MJD350T4 |
MJD340
MJD350
COMPLEMENTARY SILICON POWER TRANSISTORS
s
STMicroelectronics PREFERRED
SALESTYPES
s
COMPLEMENTARY PNP - NPN DEVICES
s
MEDIUM VOLTAGE CAPABILITY
s
SURFACE-MOUNTING TO-252 (DPAK)
POWER PACKAGE IN TAPE & REEL
(SUFFIX "T4")
s
ELECTRICAL SIMILAR TO MJE340 AND
MJE350
APPLICATIONS
s
SOLENOID/RELAY DRIVERS
s
GENERAL PURPOSE SWITCHING AND
AMPLIFIER
DESCRIPTION
The MJD340 and MJD350 form complementary
NPN - PNP pairs.
They are manufactured using Medium Voltage
Epitaxial-Planar technology, resulting in a rugged
high performance cost-effective transistor.
INTERNAL SCHEMATIC DIAGRAM
September 2003
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
NPN
MJD340
PNP
MJD350
VCBO
Collector-Base Voltage (IE = 0)
300
V
VCEO
Collector-Emitter Voltage (IB = 0)
300
V
VEBO
Emitter-Base Voltage (IC = 0)
3
V
IC
Collector Current
0.5
A
ICM
Collector Peak Current (tp = 25
oC)
0.75
A
Ptot
Total Power Dissipation at Tcase
≤ 25 oC
15
W
Tstg
Storage Temperature
-65 to 150
oC
Tj
Max Operating Junction Temperature
150
oC
For PNP types voltage and current values are negative.
DPAK
TO-252
(Suffix "T4")
1
3
1/5
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MJD350T4G | 功能描述:两极晶体管 - BJT 0.5A 300V 15W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJD350TF | 功能描述:两极晶体管 - BJT PNP Epitaxial Sil RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJD361T4-A | 功能描述:两极晶体管 - BJT LV Complimentary 60V Power Transistor RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJD41C | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Complementary Power Transistors |
| MJD41C_06 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Complementary Power Transistors |
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