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参数资料
| 型号： | MJD44H11 |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | 功率晶体管 |
| 英文描述： | 8 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-252 |
| 封装： | PLASTIC, DPAK-3 |
| 文件页数： | 1/5页 |
| 文件大小： | 152K |
| 代理商： | MJD44H11 |
MJD44H11
MJD45H11
COMPLEMENTARY SILICON PNP TRANSISTORS
s
STMicroelectronics PREFERRED
SALESTYPES
s
LOW COLLECTOR-EMITTER SATURATION
VOLTAGE
s
FAST SWITCHING SPEED
s
SURFACE-MOUNTING TO-252 (DPAK)
POWER PACKAGE IN TAPE & REEL
(SUFFIX "T4")
APPLICATIONS
s
GENERAL PURPOSE SWITCHING
s
GENERAL PURPOSE AMPLIFIER
DESCRIPTION
The MJD44H11 is a Silicon Multiepitaxial Planar
NPN
transistor
mounted
in
DPAK
plastic
package.
It is inteded for various switching and general
purpose applications.
The complementary PNP type is MJD45H11
INTERNAL SCHEMATIC DIAGRAM
May 2003
1
3
DPAK
TO-252
(Suffix "T4")
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
NPN
MJD44H11
PNP
MJD45H11
VCEO
Collector-Emitter Voltage (IB = 0)
80
V
VEBO
Emitter-Base Voltage (IC = 0)
5
V
IC
Collector Current
8
A
ICM
Collector Peak Current
16
A
Ptot
Total Dissipation at Tc
≤ 25 oC
20
W
Tstg
Storage Temperature
-55 to 150
oC
Tj
Max. Operating Junction Temperature
150
oC
For PNP types the values are intented negative.
1/5
相关PDF资料 |
PDF描述 |
|---|---|
| MJD45H11 | 8 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-252 |
| MJD45H11T4 | 8 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-252 |
| MJD45H11-T1 | 8 A, 80 V, PNP, Si, POWER TRANSISTOR |
| MJD45H11I | 8 A, 80 V, PNP, Si, POWER TRANSISTOR |
| MJD45H11-I | 8 A, 80 V, PNP, Si, POWER TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MJD44H11_03 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:COMPLEMENTARY SILICON PNP TRANSISTORS |
| MJD44H11_06 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Complementary Power Transistors |
| MJD44H11_09 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:Complementary power transistors |
| MJD44H11_11 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Complementary Power Transistors |
| MJD44H11-001 | 功能描述:两极晶体管 - BJT 8A 80V 20W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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