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参数资料
| 型号： | MJD45H11-I |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | 8 A, 80 V, PNP, Si, POWER TRANSISTOR |
| 封装： | IPAK-3 |
| 文件页数： | 1/5页 |
| 文件大小： | 158K |
| 代理商： | MJD45H11-I |
MJD45H1
1—
PNP
Epit
axial
Silicon
T
ransistor
2010 Fairchild Semiconductor Corporation
www.fairchildsemi.com
MJD45H11 Rev. C3
1
April 2010
MJD45H11
PNP Epitaxial Silicon Transistor
Applications
General Purpose Power and Switching Such as Output or Driver Stages in Applications
D-PAK for Surface Mount Applications
Features
Load Formed for Surface Mount Application (No Suffix)
Straight Lead (I-PAK: “-I” Suffix)
Electrically Similar to Popular MJE45H
Fast Switching Speeds
Low Collector Emitter Saturation Voltage
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Electrical Characteristics TA = 25°C unless otherwise noted
* Pulse Test: PW
≤300s, Duty Cycle≤2%
Symbol
Parameter
Value
Units
VCEO
Collector-Emitter Voltage
- 80
V
VEBO
Emitter-Base Voltage
- 5
V
IC
Collector Current (DC)
- 8
A
ICP
Collector Current (Pulse)
- 16
A
PC
Collector Dissipation (TC=25°C)
20
W
Collector Dissipation (TA=25°C)
1.75
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
- 55 to +150
°C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
VCEO(sus) *Collector-Emitter Sustaining Voltage IC = - 30mA, IB = 0
- 80
V
ICEO
Collector Cut-off Current
VCE = - 80V, IB = 0
- 10
A
IEBO
Emitter Cut-off Current
VBE = - 5V, IC = 0
- 50
A
hFE
*DC Current Gain
VCE = - 1V, IC = - 2A
VCE = - 1V, IC = - 4A
60
40
VCE(sat) *Collector-Emitter Saturation Voltage IC = - 8A, IB = - 0.4A
- 1
V
VBE(on)
*Base-Emitter Saturation Voltage
IC = - 8A, IB = - 0.8A
- 1.5
V
fT
Current Gain Bandwidth Product
VCE= - 10A, IC = - 0.5A
40
MHz
Cob
Collector Capacitance
VCB = - 10V, f = 1MHz
230
pF
tON
Turn On Time
IC = - 5A
IB1= - IB2 = - 0.5A
135
ns
tSTG
Storage Time
500
ns
tF
Fall Time
100
ns
1.Base
2.Collector
3.Emitter
D-PAK
I-PAK
11
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MJD45H11RL | 功能描述:两极晶体管 - BJT 8A 80V 20W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJD45H11RLG | 功能描述:两极晶体管 - BJT 8A 80V 20W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJD45H11T4 | 功能描述:两极晶体管 - BJT PNP Gen Pur Switch RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJD45H11-T4 | 制造商:STMicroelectronics 功能描述: |
| MJD45H11T4-A | 制造商:STMicroelectronics 功能描述: |
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