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参数资料
| 型号： | MJD45H11 |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | 功率晶体管 |
| 英文描述： | 8 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-252 |
| 封装： | PLASTIC, DPAK-3 |
| 文件页数： | 5/5页 |
| 文件大小： | 152K |
| 代理商： | MJD45H11 |
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MJD44H11 / MJD45H11
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相关PDF资料 |
PDF描述 |
|---|---|
| MJD45H11T4 | 8 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-252 |
| MJD45H11-T1 | 8 A, 80 V, PNP, Si, POWER TRANSISTOR |
| MJD45H11I | 8 A, 80 V, PNP, Si, POWER TRANSISTOR |
| MJD45H11-I | 8 A, 80 V, PNP, Si, POWER TRANSISTOR |
| MJD47T4 | 1 A, 250 V, NPN, Si, POWER TRANSISTOR, TO-252AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MJD45H11_10 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:PNP Epitaxial Silicon Transistor |
| MJD45H11-001 | 功能描述:两极晶体管 - BJT 8A 80V 20W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJD45H11-001G | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Complementary Power Transistors |
| MJD45H11-1 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:SILICON POWER TRANSISTORS 8 AMPERES 80 VOLTS 20 WATTS |
| MJD45H11-1G | 功能描述:两极晶体管 - BJT 8A 80V 20W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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