参数资料
型号: MJE13002P
厂商: MICRO COMMERCIAL COMPONENTS
元件分类: 功率晶体管
英文描述: 1 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-126
封装: PLASTIC PACKAGE-3
文件页数: 1/2页
文件大小: 317K
代理商: MJE13002P
MJE13002
NPN Silicon
Plastic-Encapsulate
Transistor
Features
Capable of 1.25Watts of Power Dissipation.
Collector-current 1.0A
Collector-base Voltage 600V
Operating and storage junction temperature range: -55
OC to +150OC
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage
(IC=1.0mAdc, IB=0)
400
Vdc
V(BR)CBO
Collector-Base Breakdown Voltage
(IC=100uAdc, IE=0)
600
Vdc
V(BR)EBO
Emitter-Base Breakdown Voltage
(IE=100uAdc, IC=0)
6.0
Vdc
ICBO
Collector Cutoff Current
(VCB=600Vdc, IE=0)
100
uAdc
IEBO
Emitter Cutoff Current
(VEB=6.0Vdc, IC=0)
100
uAdc
ON CHARACTERISTICS
hFE(1)
DC Current Gain
(IC=100mAdc, VCE=10Vdc)
8.0
60
hFE(2)
DC Current Gain
(IC=200mAdc, VCE=10Vdc)
9.0
40
hFE(3)
DC Current Gain
(IC=10mAdc, VCE=10Vdc)
6.0
VCE(sat)
Collector-Emitter Saturation Voltage
(IC=200mAdc, IB=40mAdc)
0.8
Vdc
VBE(sat)
Base-Emitter Saturation Voltage
(IC=200mAdc, IB=40mAdc)
1.1
Vdc
SMALL-SIGNAL CHARACTERISTICS
fT
Transistor Frequency
(IC=100mAdc, VCE=10Vdc, f=1.0MHz)
5.0
MHz
tF
Fall Time
0.5
uS
tS
Storage Time
VCC=100V,IC=1.0A,
IB1=IB2=0.2A
2.5
uS
!
E
A
D
F
G
H
J
C
B
L
M
P
Q
N
R
K
PIN 1.
EMITTER
PIN 2.
COLLECTOR
1
2
3
PIN 3.
BASE
omponents
20736 Marilla Street Chatsworth
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MCC
Revision: 2
2006/05/24
TM
Micro Commercial Components
www.mccsemi.com
1 of 2
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
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MJE13002 1 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-126
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