![](http://datasheet.mmic.net.cn/160000/MJE13002P_datasheet_9229247/MJE13002P_1.png)
MJE13002
NPN Silicon
Plastic-Encapsulate
Transistor
Features
Capable of 1.25Watts of Power Dissipation.
Collector-current 1.0A
Collector-base Voltage 600V
Operating and storage junction temperature range: -55
OC to +150OC
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage
(IC=1.0mAdc, IB=0)
400
Vdc
V(BR)CBO
Collector-Base Breakdown Voltage
(IC=100uAdc, IE=0)
600
Vdc
V(BR)EBO
Emitter-Base Breakdown Voltage
(IE=100uAdc, IC=0)
6.0
Vdc
ICBO
Collector Cutoff Current
(VCB=600Vdc, IE=0)
100
uAdc
IEBO
Emitter Cutoff Current
(VEB=6.0Vdc, IC=0)
100
uAdc
ON CHARACTERISTICS
hFE(1)
DC Current Gain
(IC=100mAdc, VCE=10Vdc)
8.0
60
hFE(2)
DC Current Gain
(IC=200mAdc, VCE=10Vdc)
9.0
40
hFE(3)
DC Current Gain
(IC=10mAdc, VCE=10Vdc)
6.0
VCE(sat)
Collector-Emitter Saturation Voltage
(IC=200mAdc, IB=40mAdc)
0.8
Vdc
VBE(sat)
Base-Emitter Saturation Voltage
(IC=200mAdc, IB=40mAdc)
1.1
Vdc
SMALL-SIGNAL CHARACTERISTICS
fT
Transistor Frequency
(IC=100mAdc, VCE=10Vdc, f=1.0MHz)
5.0
MHz
tF
Fall Time
0.5
uS
tS
Storage Time
VCC=100V,IC=1.0A,
IB1=IB2=0.2A
2.5
uS