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参数资料
| 型号： | MJE13003 |
| 厂商： | MICRO COMMERCIAL COMPONENTS |
| 元件分类： | 功率晶体管 |
| 英文描述： | 1.5 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封装： | PLASTIC, TO-220, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 0K |
| 代理商： | MJE13003 |
MJE13003
NPN Silicon
Plastic-Encapsulate
Transistor
Features
Capable of 1.5Watts of Power Dissipation.
Collector-current 1.5A
Collector-base Voltage 700V
Operating and storage junction temperature range: -55
OC to +150OC
Electrical Characteristics @ 25
OC Unless Otherwise Specified
Symbol
Parameter
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage
(IC=10mAdc, IB=0)
400
Vdc
V(BR)CBO
Collector-Base Breakdown Voltage
(IC=1000uAdc, IE=0)
700
Vdc
V(BR)EBO
Emitter-Base Breakdown Voltage
(IE=1000uAdc, IC=0)
9.0
Vdc
ICBO
Collector Cutoff Current
(VCB=700Vdc, IE=0)
1000
uAdc
ICEO
Collector Cutoff Current
(VCE=400Vdc,IB=0)
500
uAdc
IEBO
Emitter Cutoff Current
(VEB=9.0Vdc, IC=0)
1000
uAdc
ON CHARACTERISTICS
hFE(1)
DC Current Gain
(IC=0.5Adc, VCE=2.0Vdc)
8.0
40
hFE(2)
DC Current Gain
(IC=0.5mAdc, VCE=10Vdc)
5.0
VCE(sat)
Collector-Emitter Saturation Voltage
(IC=1000mAdc, IB=250mAdc)
1.0
Vdc
VBE(sat)
Base-Emitter Saturation Voltage
(IC=1000mAdc, IB=250mAdc)
1.2
Vdc
VBE
Base-Emitter Voltage
(IE=2000mAdc)
3.0
Vdc
SMALL-SIGNAL CHARACTERISTICS
fT
Trans istor Frequency
(IC=100mAdc, VCE=10Vdc, f=1.0MHz)
5.0
MHz
tF
Fall Time
0.5
uS
tS
Storage Time
VCC=100V,IC=1.0
A,IB1=IB2=0.2A
2.5
uS
INCHES
MM
A
.560
.625
14.22
15.88
B
.380
.420
9.65
10.67
C
.100
.135
2.54
3.43
D
.230
.270
5.84
6.86
E
.380
.420
9.65
10.67
F
------
.250
------
6.35
G
.500
.580
12.70
14.73
H
.090
.110
2.29
2.79
I
.020
.045
0.51
1.14
J
.012
.025
0.30
0.64
K
.139
.161
3.53
4.09
L
.140
.190
3.56
4.83
M
.045
.055
1.14
1.40
N
.080
.115
2.03
2.92
A
B
C
K
J
I
H
G
F
E
D
N
M
L
H
TO-220
PIN
omponents
20736 Marilla Street Chatsworth
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MCC
Revision: 3
2007/09/19
1
2
3
1.BASE
3.EMITTER
2.COLLECTOR
TM
Micro Commercial Components
www.mccsemi.com
1 of 3
Case Material: Molded Plastic.
UL Flammability
Classification Rating 94V-0
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| MJE13007-BP | 8 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| MJE13007R | 8 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MJE13003_06 | 制造商:KEC 制造商全称:KEC(Korea Electronics) 功能描述:TO-126 PACKAGE |
| MJE13003_09 | 制造商:KEC 制造商全称:KEC(Korea Electronics) 功能描述:TRIPLE DIFFUSED NPN TRANSISTOR |
| MJE13003_12 | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:NPN SILICON POWER TRANSISTOR |
| MJE13003A | 制造商:未知厂家 制造商全称:未知厂家 功能描述:MJE SERIES TRANSISTORS |
| MJE13003B | 制造商:WEITRON 制造商全称:Weitron Technology 功能描述:High Voltage Fast-switching NPN Power Transistor |
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