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参数资料
| 型号： | MJE13007O |
| 元件分类： | 功率晶体管 |
| 英文描述： | 8 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封装： | TO-220AB, 3 PIN |
| 文件页数： | 1/2页 |
| 文件大小： | 0K |
| 代理商： | MJE13007O |
2008. 3. 26
1/2
SEMICONDUCTOR
TECHNICAL DATA
MJE13007
TRIPLE DIFFUSED NPN TRANSISTOR
Revision No : 1
SWITCHING REGULATOR APPLICATION.
HIGH VOLTAGE SWITCHING APPLICATION.
HIGH SPEED DC-DC CONVERTER APPLICATION.
FEATURES
Excellent Switching Times
: ton=1.6 S(Max.), tf=0.7 S(Max.), at IC=5A
High Collector Voltage : VCBO=700V.
MAXIMUM RATING (Ta=25
)
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Emitter Cut-off Current
IEBO
VEB=9V, IC=0
-
1
mA
DC Current Gain
hFE(1) (Note)
VCE=5V, IC=2A
15
-
39
hFE(2)
VCE=5V, IC=5A
10
-
Collector-Emitter Saturation Voltage
VCE(sat)
IC=2A, IB=0.4A
-
1
V
IC=5A, IB=1A
-
2
IC=8A, IB=2A
-
3
Base-Emitter Saturation Voltage
VBE(sat)
IC=2A, IB=0.4A
-
1.5
V
IC=5A, IB=1A
-
1.6
Collector Output Capacitance
Cob
VCB=10V, f=0.1MHz, IE=0
-
110
-
pF
Transition Frequency
fT
VCE=10V, IC=0.5A
4
-
MHz
Turn-On Time
ton
IB1
25
B1
I
CC
V
=125V
IB2
300
S
I
=I
=1A
2%
B1
B2
OUTPUT
DUTY CYCLE
INPUT
<
=
-
1.6
S
Storage Time
tstg
-
3
S
Fall Time
tf
-
0.7
S
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
VCBO
700
V
Collector-Emitter Voltage
VCEO
400
V
Emitter-Base Voltage
VEBO
9
V
Collector Current
DC
IC
8
A
Pulse
ICP
16
Base Current
IB
4
A
Collector Power Dissipation
(Tc=25
)
PC
80
W
Junction Temperature
Tj
150
Storage Temperature Range
Tstg
-55
150
Note : hFE Classification
R:15
27, O:23
39
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相关代理商/技术参数 |
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|---|---|
| MJE13007R | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Mini size of Discrete semiconductor elements |
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| MJE13008 | 制造商:THOMSON 功能描述: |
| MJE13009 | 功能描述:两极晶体管 - BJT TO-220 NPN FASTSW PW RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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