参数资料
型号: MJE1320
厂商: SEMICONDUCTOR TECHNOLOGY INC
元件分类: 功率晶体管
英文描述: 2 A, 900 V, NPN, Si, POWER TRANSISTOR, TO-220AB
封装: PLASTIC PACKAGE-3
文件页数: 1/1页
文件大小: 0K
代理商: MJE1320
High Voltage Silicon Epoxy High Power NPN/PNP Transistors
Contact Factory for complete specification.
STI Type
MJE1320
Notes
Polarity
NPN
Power Dissipation
80
VCEV
1800
VCEO
900
ICEV
1500
ICEV A
.25
hFE
2.5
hFE A
2.0
VCE
2.5
VBE
2.8
IC
2
COB
80
fT
Case Style
TO-220AB/TO-220
Industry Type
MJE1320
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Page 1 of 1
MJE1320 High Voltage Silicon Epoxy High Power NPN/PNP Transistors
07-Sep-2010
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相关代理商/技术参数
参数描述
MJE15028 功能描述:两极晶体管 - BJT 8A 120V 50W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
MJE15028_06 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:8 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 120−150 VOLTS, 50 WATTS
MJE15028G 功能描述:两极晶体管 - BJT 8A 120V 50W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
MJE15029 功能描述:两极晶体管 - BJT 8A 120V 50W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
MJE15029 制造商:SPC Multicomp 功能描述:BIPOLAR TRANSISTOR PNP -120V TO-220 制造商:SPC Multicomp 功能描述:BIPOLAR TRANSISTOR, PNP, -120V, TO-220