MJE13007
NPN
Power Transistor
8.0 Amperes
400 Volts 80 Watts
Features
Power dissipation: 80W(Tc=25
℃)
Collector current: 8A
Operating and storage junction temperature range
TJ, Tstg: -55
℃ +150℃
Maximum Ratings @ 25OC Unless Otherwise Noted
Symbol
Rating
Type
Min
Max
Unit
VCEO
Collector-Emitter Breakdown
Voltage (IC=10mA, IE=0)
---
400
---
V
VCBO
Collector-Base Breakdown
Voltage
(IC=1mA, IB=0)
---
700
---
V
VEBO
Emitter-Base Breakdown Voltage
(IE=1mA, IC=0)
9.0
---
V
ICBO
Collector Cutoff Current
(VCB=700V,IE=0)
---
1
mA
IEBO
Emitter Cutoff Current
(VBE=9.0V,IC=0)
100
A
hFE
DC Current Gain
( IC=2.0A,VCE=5.0V)
( IC=5.0A,VCE=5.0V)
---
8.0
5.0
40
30
---
VCE(SAT)
Collector-Emitter Saturation
Voltage
( IC=2.0A, IB=0.4A)
---
1.0
V
VBE(SAT)
Base-Emitter Saturation Voltage
(IC=2.0A, IB=0.4A)
----
---
1.2
V
fT
Current Gain-Bandwidth Product
( IC=500mA, VCE=10V, f =1.0MHZ)
---
4.0
---
MHz
Cob
Output Capacitance
(VCB=10V, IE=0, f=0.1MHz)
80
---
pF
tr
Fall Time
---
0.7
s
ts
Storage Time
(VCC=125V,
IC=5.0A,
IB1=-IB2=1.0A)
---
3
s
Classification of hFE(1)
Rank
Range
8-15
15-20
20-25
25-30
30-35
35-40
INCHES
MM