型号: | MJE13005-DR6280 |
厂商: | HARRIS SEMICONDUCTOR |
元件分类: | 功率晶体管 |
英文描述: | 4 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
文件页数: | 3/3页 |
文件大小: | 75K |
代理商: | MJE13005-DR6280 |
相关PDF资料 |
PDF描述 |
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MPSA64TPE2 | 500 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
MJE1502916A | 8 A, 120 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
MTP33N10ET | 33 A, 100 V, 0.058 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
MTP8P1016 | 8 A, 100 V, 0.4 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
MTP8P10U2 | 8 A, 100 V, 0.4 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
相关代理商/技术参数 |
参数描述 |
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MJE13005F | 制造商:KEC 制造商全称:KEC(Korea Electronics) 功能描述:TRIPLE DIFFUSED NPN TRANSISTOR (SWITCHING REGULATOR, HIGH VOLTAGE SWITCHING, HIGH SPEED DC-DC CONVERTER, FLUORESCENT LIGHT BALLSTOR) |
MJE13005F_05 | 制造商:KEC 制造商全称:KEC(Korea Electronics) 功能描述:TO-220IS PACKAGE |
MJE13005F_08 | 制造商:KEC 制造商全称:KEC(Korea Electronics) 功能描述:TRIPLE DIFFUSED NPN TRANSISTOR |
MJE13005G | 功能描述:两极晶体管 - BJT 4A 400V 75W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
MJE13005G-X-T60-K | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:NPN SILICON POWER TRANSISTORS |