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参数资料
| 型号： | MJE18002 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 功率晶体管 |
| 英文描述： | POWER TRANSISTOR |
| 中文描述： | 2 A, 450 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封装： | CASE 221A-09, 3 PIN |
| 文件页数： | 2/10页 |
| 文件大小： | 254K |
| 代理商： | MJE18002 |
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS — continued
(TC = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
Base–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
(IC = 0.4 Adc, IB = 40 mAdc)
(IC = 1.0 Adc, IB = 0.2 Adc)
VBE(sat)
—
—
0.825
0.92
1.1
1.25
Vdc
Collector–Emitter Saturation Voltage
(IC = 0.4 Adc, IB = 40 mAdc)
@ TC = 125
°
C
(IC = 1.0 Adc, IB = 0.2 Adc)
@ TC = 125
°
C
VCE(sat)
—
—
—
—
0.2
0.2
0.25
0.3
0.5
0.5
0.5
0.6
Vdc
DC Current Gain (IC = 0.2 Adc, VCE = 5.0 Vdc)
@ TC = 125
°
C
DC Current Gain
(IC = 0.4 Adc, VCE = 1.0 Vdc)
@ TC = 125
°
C
DC Current Gain
(IC = 1.0 Adc, VCE = 1.0 Vdc)
@ TC = 125
°
C
DC Current Gain
(IC = 10 mAdc, VCE = 5.0 Vdc)
hFE
14
—
11
11
6.0
5.0
10
—
27
17
20
8.0
8.0
20
34
—
—
—
—
—
—
—
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth (IC = 0.2 Adc, VCE = 10 Vdc, f = 1.0 MHz)
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance (VEB = 8.0 V)
Dynamic Saturation:
IC = 0.4 A
IC = 1.0 A
VCC = 300 V
fT
—
13
—
MHz
Cob
Cib
—
35
60
pF
—
400
600
pF
Vdc
3.0
μ
s after rising IB1
(see Figure 18)
1.0
μ
s
@ TC = 125
°
C
VCE(dsat)
—
—
3.5
8.0
—
—
determined 1.0
μ
s and
IB1 = 40 mA
VCC = 300 V
3.0
μ
s
@ TC = 125
°
C
—
—
1.5
3.8
—
—
reach 0.9 final IB1
1.0
μ
s
@ TC = 125
°
C
—
—
8.0
14
—
—
IB1 = 0.2 A
3.0
μ
s
@ TC = 125
°
C
—
—
2.0
7.0
—
—
SWITCHING CHARACTERISTICS: Resistive Load
(D.C.
≤
10%, Pulse Width = 20
μ
s)
Turn–On Time
IC = 0.4 Adc
IB1 = 40 mAdc
VCC = 300 V
@ TC = 125
°
C
ton
—
—
200
130
300
—
ns
Turn–Off Time
IB2 = 0.2 Adc
@ TC = 125
°
C
toff
—
—
1.2
1.5
2.5
—
μ
s
Turn–On Time
IC = 1.0 Adc
IB1 = 0.2 Adc
VCC = 300 V
@ TC = 125
°
C
ton
—
—
85
95
150
—
ns
Turn–Off Time
IB2 = 0.5 Adc
@ TC = 125
°
C
toff
—
—
1.7
2.1
2.5
—
μ
s
SWITCHING CHARACTERISTICS: Inductive Load
(Vclamp = 300 V, VCC = 15 V, L = 200
μ
H)
Fall Time
IC = 0.4 Adc, IB1 = 40 mAdc,
IB2 = 0.2 Adc
Storage Time
@ TC = 125
°
C
tfi
—
—
125
120
200
—
ns
@ TC = 125
°
C
tsi
—
—
0.7
0.8
1.25
—
μ
s
Crossover Time
@ TC = 125
°
C
tc
—
—
110
110
200
—
ns
Fall Time
IC = 1.0 Adc, IB1 = 0.2 Adc,
IB2 = 0.5 Adc
@ TC = 125
°
C
tfi
—
—
110
120
175
—
ns
Storage Time
@ TC = 125
°
C
tsi
—
—
1.7
2.25
2.75
—
μ
s
Crossover Time
@ TC = 125
°
C
tc
—
—
200
250
300
—
ns
Fall Time
IC = 0.4 Adc, IB1 = 50 mAdc,
IB2 = 50 mAdc
@ TC = 125
°
C
tfi
—
—
140
185
200
—
ns
Storage Time
@ TC = 125
°
C
tsi
—
—
2.2
2.5
3.0
—
μ
s
Crossover Time
@ TC = 125
°
C
tc
—
—
140
220
250
—
ns
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