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参数资料
| 型号： | MJE18002 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 功率晶体管 |
| 英文描述： | POWER TRANSISTOR |
| 中文描述： | 2 A, 450 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封装： | CASE 221A-09, 3 PIN |
| 文件页数： | 4/10页 |
| 文件大小： | 254K |
| 代理商： | MJE18002 |
4
Motorola Bipolar Power Transistor Device Data
hFE, FORCED GAIN
t
IC, COLLECTOR CURRENT (AMPS)
0
500
1000
1500
2000
2500
5
7
9
15
0
500
1000
1500
2000
2500
3000
2.0
0
500
1000
1500
2000
2500
IC, COLLECTOR CURRENT (AMPS)
2.0
0
0.4
500
1000
1500
2000
2500
3000
3500
4000
4500
0.6
0.8
IC, COLLECTOR CURRENT (AMPS)
1.0
1.2
1.4
1.6
1.8
2.0
0
0.4
50
100
150
200
250
300
350
400
450
0.6
0.8
IC, COLLECTOR CURRENT (AMPS)
1.0
1.2
1.4
1.6
1.8
2.0
0
0.4
100
200
300
400
500
600
0.6
0.8
IC, COLLECTOR CURRENT (AMPS)
1.0
1.2
1.4
1.6
1.8
2.0
TYPICAL SWITCHING CHARACTERISTICS
(IB2 = IC/2 for all switching)
t
t
t
t
t
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
Figure 7. Resistive Switching, ton
IC/IB = 5
IC/IB = 10
TJ = 125
°
C
TJ = 25
°
C
IB(off) = IC/2
VCC = 300 V
PW = 20
μ
s
Figure 8. Resistive Switching, toff
IB(off) = IC/2
VCC = 300 V
PW = 20
μ
s
TJ = 25
°
C
TJ = 125
°
C
IC/IB = 10
IC/IB = 5
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
Figure 9. Inductive Storage Time, tsi
IB(off) = IC/2
VCC = 15 V
VZ = 300 V
LC = 200
μ
H
TJ = 25
°
C
TJ = 125
°
C
IC/IB = 5
IC/IB = 10
5
7
9
11
13
15
Figure 10. Inductive Storage Time
TJ = 25
°
C
TJ = 125
°
C
IB(off) = IC/2
VCC = 15 V
VZ = 300 V
LC = 200
μ
H
IC = 1 A
IC = 0.4 A
IB(off) = IC/2
VCC = 15 V
VZ = 300 V
LC = 200
μ
H
TJ = 25
°
C
TJ = 125
°
C
tc
tfi
tc
tfi
Figure 11. Inductive Switching, tc & tfi, IC/IB = 5
Figure 12. Inductive Switching, tc & tfi, IC/IB = 10
IB(off) = IC/2
VCC = 15 V
VZ = 300 V
LC = 200
μ
H
TJ = 25
°
C
TJ = 125
°
C
tc
tfi
tc
tfi
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| MJE18004D2 | 功能描述:两极晶体管 - BJT 5A 1000V 75W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJE18004D2G | 功能描述:两极晶体管 - BJT 5A 1000V 75W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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