参数资料
型号: MJE18006
厂商: MOTOROLA INC
元件分类: 功率晶体管
英文描述: POWER TRANSISTOR 6.0 AMPERES 1000 VOLTS 40 and 100 WATTS
中文描述: 6 A, 450 V, NPN, Si, POWER TRANSISTOR, TO-220AB
文件页数: 2/10页
文件大小: 415K
代理商: MJE18006
2
Motorola Bipolar Power Transistor Device Data
ON CHARACTERISTICS
(IC = 1.3 Adc, IB = 0.13 Adc)
0.6
0.8
DC Current Gain (IC = 0.5 Adc, VCE = 5.0 Vdc)
(TC = 125 C)
hFE
14
5.0
0.25
0.4
8.0
34
(TC = 125 C)
(IC = 1.3 Adc
(IC = 3.0 Adc
(TC = 125
°
C)
12
3.0
s respectively after
(see Figure 18)
(TC = 125
°
C)
3.0
rising IB1 reaches 90% of
1.0
μ
s
IB1 = 0.6 Adc
7.5
SWITCHING CHARACTERISTICS: Resistive Load
(D.C.
10%, Pulse Width = 20
μ
s)
Turn–On Time
(IC = 3.0 Adc, IB1 = 0.6 Adc,
ton
90
180
ns
IB2 = 0.65 Adc, VCC = 300 V)
(TC = 125
°
C)
130
Turn–Off Time
toff
1.2
2.5
μ
s
(TC = 125
°
C)
1.9
Crossover Time
tc
220
350
ns
(TC = 125
°
C)
2.75
Crossover Time
tc
200
300
ns
相关PDF资料
PDF描述
MJF18008 POWER TRANSISTOR 8.0 AMPERES 1000 VOLTS 45 and 125 WATTS
MJF18008 POWER TRANSISTOR
MJE18008 POWER TRANSISTOR
MJE18008 POWER TRANSISTOR 8.0 AMPERES 1000 VOLTS 45 and 125 WATTS
MJF18009 POWER TRANSISTORS 10 AMPERES 1000 VOLTS 50 and 150 WATTS
相关代理商/技术参数
参数描述
MJE18006G 功能描述:两极晶体管 - BJT BIP NPN 8A 450V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
MJE18008 功能描述:两极晶体管 - BJT 8A 450V 125W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
MJE18008G 功能描述:两极晶体管 - BJT 8A 450V 125W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
MJE18009 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:POWER TRANSISTORS
MJE180G 功能描述:两极晶体管 - BJT 3A 40V 12.5W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2