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参数资料
型号： MJE18006BG
厂商： ON SEMICONDUCTOR
元件分类： 功率晶体管
英文描述： 6 A, 450 V, NPN, Si, POWER TRANSISTOR
封装： PLASTIC, TO-220AB, 3 PIN
文件页数： 12/65页
文件大小： 498K
代理商： MJE18006BG
MJE18006 MJF18006
3–735
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS — continued (TC = 25_C unless otherwise specified)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
Base–Emitter Saturation Voltage (IC = 1.3 Adc, IB = 0.13 Adc)
Base–Emitter Saturation Voltage (IC = 3.0 Adc, IB = 0.6 Adc)
VBE(sat)
—
0.83
0.94
1.2
1.3
Vdc
Collector–Emitter Saturation Voltage
(IC = 1.3 Adc, IB = 0.13 Adc)
(TC = 125_C)
(IC = 3.0 Adc, IB = 0.6 Adc)
(TC = 125_C)
VCE(sat)
—
0.25
0.27
0.35
0.4
0.6
0.65
0.7
0.8
Vdc
DC Current Gain (IC = 0.5 Adc, VCE = 5.0 Vdc)
(TC = 125_C)
DC Current Gain (IC = 3.0 Adc, VCE = 1.0 Vdc)
(TC = 125_C)
DC Current Gain (IC = 1.3 Adc, VCE = 1.0 Vdc)
(TC = 25 to 125_C)
DC Current Gain (IC = 10 mAdc, VCE = 5.0 Vdc)
hFE
14
—
6.0
5.0
11
10
—
32
10
8.0
17
22
34
—
—
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 MHz)
fT
—
14
—
MHz
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cob
—
75
120
pF
Input Capacitance (VEB = 8.0 V)
Cib
—
1000
1500
pF
Dynamic Saturation Voltage:
Determined 1 0
s and
(IC = 1.3 Adc
IB1 = 130 mAdc
1.0
s
(TC = 125°C)
VCE(dsat)
—
5.5
12
—
Volts
Determined 1.0
s and
3.0
s respectively after
rising IB1 reaches 90% of
IB1 = 130 mAdc
VCC = 300 V)
3.0
s
(TC = 125°C)
—
3.0
7.0
—
g B1
final IB1
(see Figure 18)
(IC = 3.0 Adc
IB1 =0 6Adc
1.0
s
(TC = 125°C)
—
9.5
14.5
—
IB1 = 0.6 Adc
VCC = 300 V)
3.0
s
(TC = 125°C)
—
2.0
7.5
—
SWITCHING CHARACTERISTICS: Resistive Load (D.C.
v 10%, Pulse Width = 20 s)
Turn–On Time
(IC = 3.0 Adc, IB1 = 0.6 Adc,
IB2 = 1.5 Adc, VCC = 300 V)
(TC = 125°C)
ton
—
90
100
180
—
ns
Turn–Off Time
(TC = 125°C)
toff
—
1.7
2.1
2.5
—
s
Turn–On Time
(IC = 1.3 Adc, IB1 = 0.13 Adc,
IB2 = 0.65 Adc, VCC = 300 V)
(TC = 125°C)
ton
—
200
130
300
—
ns
Turn–Off Time
(TC = 125°C)
toff
—
1.2
1.5
2.5
—
s
SWITCHING CHARACTERISTICS: Inductive Load (Vclamp = 300 V, VCC = 15 V, L = 200 H)
Fall Time
(IC = 1.5 Adc, IB1 = 0.13 Adc,
IB2 = 0.65 Adc)
(TC = 125°C)
tfi
—
100
120
180
—
ns
Storage Time
(TC = 125°C)
tsi
—
1.5
1.9
2.5
—
s
Crossover Time
(TC = 125°C)
tc
—
220
230
350
—
ns
Fall Time
(IC = 3.0 Adc, IB1 = 0.6 Adc,
IB2 = 1.5 Adc)
(TC = 125°C)
tfi
—
85
120
150
—
ns
Storage Time
(TC = 125°C)
tsi
—
2.15
2.75
3.2
—
s
Crossover Time
(TC = 125°C)
tc
—
200
310
300
—
ns
相关PDF资料
PDF描述
MJE18006AS 6 A, 450 V, NPN, Si, POWER TRANSISTOR
MJE18006BA 6 A, 450 V, NPN, Si, POWER TRANSISTOR
MJE18006BU 6 A, 450 V, NPN, Si, POWER TRANSISTOR
MJE18006BS 6 A, 450 V, NPN, Si, POWER TRANSISTOR
MJE18008BG 8 A, 450 V, NPN, Si, POWER TRANSISTOR
相关代理商/技术参数
参数描述
MJE18006G 功能描述:两极晶体管 - BJT BIP NPN 8A 450V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
MJE18008 功能描述:两极晶体管 - BJT 8A 450V 125W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
MJE18008G 功能描述:两极晶体管 - BJT 8A 450V 125W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
MJE18009 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:POWER TRANSISTORS
MJE180G 功能描述:两极晶体管 - BJT 3A 40V 12.5W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
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