参数资料
型号: MJE18008
厂商: MOTOROLA INC
元件分类: 功率晶体管
英文描述: POWER TRANSISTOR 8.0 AMPERES 1000 VOLTS 45 and 125 WATTS
中文描述: 8 A, 450 V, NPN, Si, POWER TRANSISTOR, TO-220AB
文件页数: 4/10页
文件大小: 421K
代理商: MJE18008
4
Motorola Bipolar Power Transistor Device Data
Figure 7. Resistive Switching, ton
Figure 8. Resistive Switching, toff
IC, COLLECTOR CURRENT (AMPS)
IC COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
0
1500
IC, COLLECTOR CURRENT (AMPS)
t
Figure 9. Inductive Storage Time, tsi
Figure 10. Inductive Storage Time, tsi(hFE)
Figure 11. Inductive Switching, tc and tfi
IC/IB = 5
Figure 12. Inductive Switching, tc and tfi
IC/IB = 10
1000
0
4
8
2000
0
3500
3
hFE, FORCED GAIN
6
400
50
0
IC, COLLECTOR CURRENT (AMPS)
4
8
250
200
50
2000
0
12
15
300
150
2
2
5
8
IC/IB = 5
t
200
150
100
6
500
IC/IB = 10
4
8
2
6
500
1000
1500
2500
3000
3500
t
t
1
3
4
6
7
1000
1500
2500
9
5000
2000
0
500
1000
1500
2500
3000
3500
1
2
3
5
t
4
7
8
1
2
3
5
6
t
1
3
5
7
1
3
5
7
500
3000
4
5
7
8
10
11
13
14
250
100
IC/IB = 10
IB(off) = IC/2
VCC = 15 V
VZ = 300 V
LC = 200
μ
H
4000
4500
300
350
IB(off) = IC/2
VCC = 300 V
PW = 20
μ
s
IC/IB = 5
IC/IB = 10
TJ = 125
°
C
TJ = 25
°
C
4500
4000
IC/IB = 5
IB(off) = IC/2
VCC = 15 V
VZ = 300 V
LC = 200
μ
H
IC = 2 A
IB(off) = IC/2
VCC = 15 V
VZ = 300 V
LC = 200
μ
H
6
7
tfi
tc
tfi
tc
TJ = 25
°
C
TJ = 125
°
C
TYPICAL SWITCHING CHARACTERISTICS
(IB2 = IC/2 for all switching)
IC = 4.5 A
IB(off) = IC/2
VCC = 15 V
VZ = 300 V
LC = 200
μ
H
IB(off) = IC/2
VCC = 300 V
PW = 20
μ
s
TJ = 25
°
C
TJ = 125
°
C
TJ = 25
°
C
TJ = 125
°
C
TJ = 25
°
C
TJ = 125
°
C
TJ = 25
°
C
TJ = 125
°
C
相关PDF资料
PDF描述
MJF18009 POWER TRANSISTORS 10 AMPERES 1000 VOLTS 50 and 150 WATTS
MJF18009 POWER TRANSISTORS
MJE18009 POWER TRANSISTORS
MJE18009 POWER TRANSISTORS 10 AMPERES 1000 VOLTS 50 and 150 WATTS
MJF18204 POWER TRANSISTORS 5 AMPERES 1200 VOLTS 35 and 75 WATTS
相关代理商/技术参数
参数描述
MJE18008G 功能描述:两极晶体管 - BJT 8A 450V 125W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
MJE18009 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:POWER TRANSISTORS
MJE180G 功能描述:两极晶体管 - BJT 3A 40V 12.5W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
MJE180PWD 功能描述:TRANSISTOR NPN 40V 3A RoHS:是 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)(最大):1A 电压 - 集电极发射极击穿(最大):30V Ib、Ic条件下的Vce饱和度(最大):200mV @ 100mA,1A 电流 - 集电极截止(最大):100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA,5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3,SC-59,SOT-23-3 供应商设备封装:SOT-23-3(TO-236) 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR
MJE180STU 功能描述:两极晶体管 - BJT NPN Epitaxial Sil RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2