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参数资料
型号： MJE18008BA
厂商： ON SEMICONDUCTOR
元件分类： 功率晶体管
英文描述： 8 A, 450 V, NPN, Si, POWER TRANSISTOR
封装： PLASTIC, TO-220AB, 3 PIN
文件页数： 12/65页
文件大小： 503K
代理商： MJE18008BA
MJE18008 MJF18008
3–743
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS — continued (TC = 25_C unless otherwise specified)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
Base–Emitter Saturation Voltage (IC = 2.0 Adc, IB = 0.2 Adc)
Base–Emitter Saturation Voltage (IC = 4.5 Adc, IB = 0.9 Adc)
VBE(sat)
—
0.82
0.92
1.1
1.25
Vdc
Collector–Emitter Saturation Voltage
(IC = 2.0 Adc, IB = 0.2 Adc)
(TC = 125_C)
(IC = 4.5 Adc, IB = 0.9 Adc)
(TC = 125_C)
VCE(sat)
—
0.3
0.35
0.4
0.6
0.65
0.7
0.8
Vdc
DC Current Gain (IC = 1.0 Adc, VCE = 5.0 Vdc)
(TC = 125_C)
DC Current Gain (IC = 4.5 Adc, VCE = 1.0 Vdc)
(TC = 125_C)
DC Current Gain (IC = 2.0 Adc, VCE = 1.0 Vdc)
(TC = 125_C)
DC Current Gain (IC = 10 mAdc, VCE = 5.0 Vdc)
hFE
14
—
6.0
5.0
11
10
—
28
9.0
8.0
15
16
20
34
—
—
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 MHz)
fT
—
13
—
MHz
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cob
—
100
150
pF
Input Capacitance (VEB = 8.0 V)
Cib
—
1750
2500
pF
Dynamic Saturation Voltage:
Determined 1 0
s and
(IC = 2.0 Adc
IB1 = 200 mAdc
1.0
s
(TC = 125°C)
VCE(dsat)
—
5.5
11.5
—
Vdc
Determined 1.0
s and
3.0
s respectively after
rising IB1 reaches 90% of
IB1 = 200 mAdc
VCC = 300 V)
3.0
s
(TC = 125°C)
—
3.5
6.5
—
g B1
final IB1
(see Figure 18)
(IC = 5.0 Adc
IB1 =1 0Adc
1.0
s
(TC = 125°C)
—
11.5
14.5
—
IB1 = 1.0 Adc
VCC = 300 V)
3.0
s
(TC = 125°C)
—
2.4
9.0
—
—
SWITCHING CHARACTERISTICS: Resistive Load (D.C.
v 10%, Pulse Width = 20 s)
Turn–On Time
(IC = 2.0 Adc, IB1 = 0.2 Adc,
IB2 = 1.0 Adc, VCC = 300 V)
(TC = 125°C)
ton
—
200
190
300
—
ns
Turn–Off Time
(TC = 125°C)
toff
—
1.2
1.5
2.5
—
s
Turn–On Time
(IC = 4.5 Adc, IB1 = 0.9 Adc,
IB2 = 2.25 Adc, VCC = 300 V)
(TC = 125°C)
ton
—
100
250
180
—
ns
Turn–Off Time
(TC = 125°C)
toff
—
1.6
2.0
2.5
—
s
SWITCHING CHARACTERISTICS: Inductive Load (Vclamp = 300 V, VCC = 15 V, L = 200 H)
Fall Time
(IC = 2.0 Adc, IB1 = 0.2 Adc,
IB2 = 1.0 Adc)
(TC = 125°C)
tfi
—
100
120
180
—
ns
Storage Time
(TC = 125°C)
tsi
—
1.5
1.9
2.75
—
s
Crossover Time
(TC = 125°C)
tc
—
250
230
350
—
ns
Fall Time
(IC = 4.5 Adc, IB1 = 0.9 Adc,
IB2 = 2.25 Adc)
(TC = 125°C)
tfi
—
85
135
150
—
ns
Storage Time
(TC = 125°C)
tsi
—
2.0
2.6
3.2
—
s
Crossover Time
(TC = 125°C)
tc
—
210
250
300
—
ns
相关PDF资料
PDF描述
MJE18008BU 8 A, 450 V, NPN, Si, POWER TRANSISTOR
MJE18008BS 8 A, 450 V, NPN, Si, POWER TRANSISTOR
MJE18008AK 8 A, 450 V, NPN, Si, POWER TRANSISTOR
MJE18008AN 8 A, 450 V, NPN, Si, POWER TRANSISTOR
MJE18008BV 8 A, 450 V, NPN, Si, POWER TRANSISTOR
相关代理商/技术参数
参数描述
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