参数资料
型号: MJE18008BA
厂商: ON SEMICONDUCTOR
元件分类: 功率晶体管
英文描述: 8 A, 450 V, NPN, Si, POWER TRANSISTOR
封装: PLASTIC, TO-220AB, 3 PIN
文件页数: 34/65页
文件大小: 503K
代理商: MJE18008BA
MJE18008 MJF18008
3–745
Motorola Bipolar Power Transistor Device Data
Figure 7. Resistive Switching, ton
Figure 8. Resistive Switching, toff
IC, COLLECTOR CURRENT (AMPS)
IC COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
0
1500
IC, COLLECTOR CURRENT (AMPS)
t,TIME
(ns)
Figure 9. Inductive Storage Time, tsi
Figure 10. Inductive Storage Time, tsi(hFE)
Figure 11. Inductive Switching, tc and tfi
IC/IB = 5
Figure 12. Inductive Switching, tc and tfi
IC/IB = 10
1000
0
48
2000
0
3500
3
hFE, FORCED GAIN
6
400
50
0
IC, COLLECTOR CURRENT (AMPS)
48
250
200
50
2000
0
12
15
300
150
2
25
8
IC/IB = 5
t si
,ST
ORAGE
TIME
(ns)
200
150
100
6
500
IC/IB = 10
48
26
500
1000
1500
2500
3000
3500
t,TIME
(ns)
t,TIME
(ns)
13
4
6
7
1000
1500
2500
9
5000
2000
0
500
1000
1500
2500
3000
3500
12
3
5
t,TIME
(ns)
47
8
12
3
5
6
t,TIME
(ns)
1
357
1
3
5
7
500
3000
4
5
7
8
10
11
13
14
250
100
IC/IB = 10
IB(off) = IC/2
VCC = 15 V
VZ = 300 V
LC = 200 H
4000
4500
300
350
IB(off) = IC/2
VCC = 300 V
PW = 20
s
IC/IB = 5
IC/IB = 10
TJ = 125°C
TJ = 25°C
4500
4000
IC/IB = 5
IB(off) = IC/2
VCC = 15 V
VZ = 300 V
LC = 200 H
IC = 2 A
IB(off) = IC/2
VCC = 15 V
VZ = 300 V
LC = 200 H
67
tfi
tc
tfi
tc
TJ = 25°C
TJ = 125°C
TYPICAL SWITCHING CHARACTERISTICS
(IB2 = IC/2 for all switching)
IC = 4.5 A
IB(off) = IC/2
VCC = 15 V
VZ = 300 V
LC = 200 H
IB(off) = IC/2
VCC = 300 V
PW = 20
s
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
相关PDF资料
PDF描述
MJE18008BU 8 A, 450 V, NPN, Si, POWER TRANSISTOR
MJE18008BS 8 A, 450 V, NPN, Si, POWER TRANSISTOR
MJE18008AK 8 A, 450 V, NPN, Si, POWER TRANSISTOR
MJE18008AN 8 A, 450 V, NPN, Si, POWER TRANSISTOR
MJE18008BV 8 A, 450 V, NPN, Si, POWER TRANSISTOR
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