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参数资料
| 型号： | MJE18204AF |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 功率晶体管 |
| 英文描述： | 5 A, 600 V, NPN, Si, POWER TRANSISTOR |
| 封装： | PLASTIC, TO-220AB, 3 PIN |
| 文件页数： | 12/67页 |
| 文件大小： | 533K |
| 代理商： | MJE18204AF |
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MJE18204 MJF18204
3–760
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Voltage
(IC = 1 mA, IB = 0)
VCEO
600
660
Vdc
Collector–Emitter Sustaining Voltage
(IC = 100 mA, L = 25 mH)
(IC = 200 mA, L = 25 mH, R = 2 )
VCEO(sus)
VCER(sus)
550
600
630
700
Vdc
Collector–Base Breakdown Voltage
(ICBO = 1 mA, IE = 0)
VCBO
1200
1300
Vdc
Emitter–Base Breakdown Voltage
(IEBO = 1 mA, IC = 0)
VEBO
10
12.9
Vdc
Collector Cutoff Current (VCE = 600 V, IB = 0)
Collector Cutoff Current (VCE = 550 V, IB = 0)
@ TC = 25°C
@ TC = 125°C
ICEO
200
2000
Adc
Collector Cutoff Current (VCE = Rated VCES, VBE = 0)
Collector Cutoff Current (VCE = 1000 V, VBE = 0)
@ TC = 25°C
@ TC = 125°C
ICES
100
500
100
Adc
Collector Cutoff Current
(VCB = Rated VCB, IE = 0)
ICBO
100
Adc
Emitter–Cutoff Current
(VEB = 10 Vdc, IC = 0)
IEBO
100
Adc
ON CHARACTERISTICS
Base–Emitter Saturation Voltage
(IC = 1 Adc, IB = 0.1 Adc)
(IC = 2 Adc, IB = 0.4 Adc)
VBE(sat)
0.83
0.92
1.1
1.25
Vdc
Collector–Emitter Saturation Voltage
(IC = 1 Adc, IB = 0.1 Adc)
@ TC = 25°C
@ TC = 125°C
VCE(sat)
0.3
0.7
1
1.25
Vdc
(IC = 2 Adc, IB = 0.4 Adc)
@ TC = 25°C
@ TC = 125°C
0.3
0.8
0.6
1.25
DC Current Gain
(IC = 0.5 Adc, VCE = 3 Vdc)
@ TC = 25°C
@ TC = 125°C
hFE
18
23
35
—
(IC = 1 Adc, VCE = 1 Vdc)
@ TC = 25°C
@ TC = 125°C
10
8
13
22
(IC = 2 Adc, VCE = 1 Vdc)
@ TC = 25°C
@ TC = 125°C
5
4
8
6
—
(IC = 5 mAdc, VCE = 5 Vdc)
@ TC = 25°C
@ TC = 125°C
10
25
33
—
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth (IC = 0.5 Adc, VCE = 10 Vdc, f = 1 MHz)
fT
13
MHz
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1 MHz)
Cob
200
pF
Input Capacitance (VEB = 8 Vdc)
Cib
2000
pF
DYNAMIC SATURATION VOLTAGE
Dynamic Saturation
Vlt
IC = 2 Adc
IB1 = 660 mAdc
@ 3
s
@ TC = 25°C
VCE(dsat)
2.5
V
Voltage:
Determined 1
s and
IB1 = 660 mAdc
VCC = 300 V
@ TC = 125°C
7.5
3
s respectively after
rising IB1 reaches
IC = 2 Adc
IB1 =0 4Adc
@ 3
s
@ TC = 25°C
7
g B1
90% of final IB1
IB1 = 0.4 Adc
VCC = 300 V
@ TC = 125°C
15
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