参数资料
型号: MJE18204AF
厂商: ON SEMICONDUCTOR
元件分类: 功率晶体管
英文描述: 5 A, 600 V, NPN, Si, POWER TRANSISTOR
封装: PLASTIC, TO-220AB, 3 PIN
文件页数: 45/67页
文件大小: 533K
代理商: MJE18204AF
MJE18204 MJF18204
3–763
Motorola Bipolar Power Transistor Device Data
t,TIME
(ns)
TYPICAL STATIC CHARACTERISTICS
Figure 7. Capacitance
10000
10
100
10
1
VR, REVERSE VOLTAGE (VOLTS)
C,
CAP
ACIT
ANCE
(pF) 1000
TJ = 25°C
f(test) = 1 MHz
100
Cib (pF)
Cob (pF)
Figure 8. Resistive Switching, ton
1600
0
5
1
0.5
IC, COLLECTOR CURRENT (AMPS)
1.5
800
IC/IB = 10
IC/IB = 5
IB1 = IB2
VCC = 300 V
PW = 20
s
1400
1200
1000
600
400
200
2
2.5
3
3.5
4
4.5
Figure 9. Resistive Switching, toff
8
5
1
IC, COLLECTOR CURRENT (AMPS)
6
t,TIME
(
s)
7
2
TJ = 125°C
TJ = 25°C
IC/IB = 10
IC/IB = 5
4
3
5
1
0.5
1.5
2
2.5
3
3.5
4
4.5
IB1 = IB2
VCC = 300 V
PW = 20
s
t,TIME
(ns)
Figure 10. Inductive Storage Time, tsi
6
3
2
3.5
1
0.5
IC, COLLECTOR CURRENT (AMPS)
1.5
4
TJ = 125°C
TJ = 25°C
IC/IB = 5
5
3
2.5
2
IC/IB = 10
IB1 = IB2
VCC = 15 V
VZ = 300 V
LC = 200 H
Figure 11. Inductive Storage Time, tsi (hFE)
6
3
15
7
3
hFE, FORCED GAIN
13
4
9
TJ = 125°C
TJ = 25°C
,ST
ORAGE
TIME
(
t si
s)
5
511
IB1 = IB2
VCC = 15 V
VZ = 300 V
LC = 200 H
IC = 1 A
IC = 2 A
Figure 12. Inductive Switching,
tc & tfi @ IC/IB = 5
1500
0
3
1
0
IC, COLLECTOR CURRENT (AMPS)
2
t,TIME
(ns)
1000
500
TJ = 125°C
TJ = 25°C
tc
IB1 = IB2
VCC = 15 V
VZ = 300 V
LC = 200 H
TJ = 125°C
TJ = 25°C
tc
tfi
相关PDF资料
PDF描述
MJE18204BU 5 A, 600 V, NPN, Si, POWER TRANSISTOR
MJE18204AJ 5 A, 600 V, NPN, Si, POWER TRANSISTOR
MJE18204DW 5 A, 600 V, NPN, Si, POWER TRANSISTOR
MJE18204BC 5 A, 600 V, NPN, Si, POWER TRANSISTOR
MJE18204BD 5 A, 600 V, NPN, Si, POWER TRANSISTOR
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