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参数资料
| 型号： | MJE18204AJ |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 功率晶体管 |
| 英文描述： | 5 A, 600 V, NPN, Si, POWER TRANSISTOR |
| 封装： | PLASTIC, TO-220AB, 3 PIN |
| 文件页数： | 65/67页 |
| 文件大小： | 533K |
| 代理商： | MJE18204AJ |
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MJE18204 MJF18204
3–765
Motorola Bipolar Power Transistor Device Data
POWER
DERA
TING
FACT
OR
Figure 19. Forward Bias Power Derating
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC–VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to
greater dissipation than the curves indicate. The data of
Figure 19 is based on TC = 25°C; TJ(pk) is variable
depending on power level. Second breakdown pulse limits
are valid for duty cycles to 10% but must be derated when
TC > 25°C. Second breakdown limitations do not derate the
same as thermal limitations. Allowable current at the
voltages shown on Figure 16 may be found at any case
temperature by using the appropriate curve on Figure 18.
TJ(pk) may be calculated from the data in Figures 21 and
22. At any case temperatures, thermal limitations will
reduce the power that can be handled to values less than
the limitations imposed by second breakdown. For induc-
tive loads, high voltage and current must be sustained
simultaneously during turn–off with the base–to–emitter
junction reverse biased. The safe level is specified as a
reverse–biased safe operating area (Figure 17). This rating
is verified under clamped conditions so that the device is
never subjected to an avalanche mode.
TC, CASE TEMPERATURE (°C)
1.0
0.8
0.6
0.4
0.2
0
160
140
120
100
80
60
40
20
SECOND
BREAKDOWN
DERATING
THERMAL
DERATING
TYPICAL STATIC CHARACTERISTICS
Figure 20. Dynamic Saturation
Voltage Measurements
Figure 21. Inductive Switching Measurements
TYPICAL SWITCHING CHARACTERISTICS
(IB1 = IB2 FOR ALL CURVES)
TIME
10
4
0
8
2
06
8
6
2
4
9
7
5
3
1
13
5
7
VCE
0 V
IB
90% IB
1
s
3
s
dyn 1
s
dyn 3
s
IB
IC
Vclamp
tsi
tc
tfi
90% IC
10% IC
90% IB1
10% Vclamp
TIME
相关PDF资料 |
PDF描述 |
|---|---|
| MJE18204DW | 5 A, 600 V, NPN, Si, POWER TRANSISTOR |
| MJE18204BC | 5 A, 600 V, NPN, Si, POWER TRANSISTOR |
| MJE18204BD | 5 A, 600 V, NPN, Si, POWER TRANSISTOR |
| MJE18204AK | 5 A, 600 V, NPN, Si, POWER TRANSISTOR |
| MJE18204AU | 5 A, 600 V, NPN, Si, POWER TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
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| MJE182STU | 功能描述:两极晶体管 - BJT NPN Epitaxial Sil RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJE18604 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:POWER TRANSISTORS 3 AMPERES 1600 VOLTS 100 WATTS |
| MJE18604D2 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:POWER TRANSISTORS 3 AMPERES 1600 VOLTS 100 WATTS |
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