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参数资料
| 型号： | MJE3055TAK |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 功率晶体管 |
| 英文描述： | 10 A, 60 V, NPN, Si, POWER TRANSISTOR |
| 封装： | PLASTIC, TO-220AB, 3 PIN |
| 文件页数： | 12/59页 |
| 文件大小： | 357K |
| 代理商： | MJE3055TAK |
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MJE2955T MJE3055T
3–629
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (1) (IC = 200 mAdc, IB = 0)
VCEO(sus)
60
—
Vdc
Collector Cutoff Current (VCE = 30 Vdc, IB = 0)
ICEO
—
700
Adc
Collector Cutoff Current
(VCE = 70 Vdc, VEB(off) = 1.5 Vdc)
(VCE = 70 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C)
ICEX
—
1.0
5.0
mAdc
Collector Cutoff Current
(VCB = 70 Vdc, IE = 0)
(VCB = 70 Vdc, IE = 0, TC = 150_C)
ICBO
—
1.0
10
mAdc
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
IEBO
—
5.0
mAdc
ON CHARACTERISTICS
DC Current Gain (1)
(IC = 4.0 Adc, VCE = 4 0 Vdc)
(IC = 10 Adc, VCE = 4.0 Vdc)
hFE
20
5.0
100
—
—
Collector–Emitter Saturation Voltage (1)
(IC = 4.0 Adc, IB = 0.4 Adc)
(IC = 10 Adc, IB = 3.3 Adc)
VCE(sat)
—
1.1
8.0
Vdc
Base–Emitter On Voltage (1) (IC = 4.0 Adc, VCE = 4.0 Vdc)
VBE(on)
—
1.8
Vdc
DYNAMIC CHARACTERISTICS
Current–Gain–Bandwidth Product (IC = 500 mAdc, VCE = 10 Vdc, f = 500 kHz)
fT
2.0
—
MHz
(1) Pulse Test: Pulse Width
v 300 s, Duty Cycle v 20%.
0
TC, CASE TEMPERATURE (°C)
75
100
175
25
50
Figure 2. DC Current Gain
125
150
500
0.01
Figure 3. Power Derating
IC, COLLECTOR CURRENT (AMP)
5.0
0.02
0.05
0.1
0.2
1.0
2.0
10
0.5
300
200
100
50
30
90
0
80
60
40
70
50
h
FE
,DC
C
URREN
T
GAIN
20
10
5.0
TJ = 150°C
25
°C
–55
°C
VCE = 2.0 V
P
D
,POWER
DISSIP
A
TION
(W
A
TTS)
30
10
20
MJE3055T
MJE2955T
0.1
IC, COLLECTOR CURRENT (AMP)
0.5
1.0
10
0.2 0.3
2.0 3.0
Figure 4. “On” Voltages
2.0
0
1.6
1.2
0.8
V,
V
OL
TAGE
(
V
OL
T
S
)
0.4
5.0
TJ = 25°C
VBE(sat) @ IC/IB = 10
VBE @ VCE = 3.0 V
VCE(sat) @ IC/IB = 10
MJE2955T
0.1
IC, COLLECTOR CURRENT (AMP)
0.5
1.0
10
0.2 0.3
2.0
3.0
1.4
0
1.2
1.0
0.8
V
,VOL
TAGE
(VOL
TS)
0.4
5.0
TJ = 25°C
VBE(sat) @ IC/IB = 10
VBE @ VCE = 2.0 V
VCE(sat) @ IC/IB = 10
MJE3055T
0.6
0.2
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| MJE3055TAJ | 10 A, 60 V, NPN, Si, POWER TRANSISTOR |
| MJE3055TAN | 10 A, 60 V, NPN, Si, POWER TRANSISTOR |
| MJE2955TAJ | 10 A, 60 V, PNP, Si, POWER TRANSISTOR |
| MJE2955TBV | 10 A, 60 V, PNP, Si, POWER TRANSISTOR |
| MJE3055TBC | 10 A, 60 V, NPN, Si, POWER TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MJE3055TG | 功能描述:两极晶体管 - BJT 10A 60V 125W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJE3055TG-TA3-T | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:HIGH VOLTAGE TRANSISTOR |
| MJE3055TG-TM3-T | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:HIGH VOLTAGE TRANSISTOR |
| MJE3055TG-TN3-R | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:HIGH VOLTAGE TRANSISTOR |
| MJE3055TL-TA3-T | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:HIGH VOLTAGE TRANSISTOR |
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