参数资料
型号: MJE3055TAN
厂商: ON SEMICONDUCTOR
元件分类: 功率晶体管
英文描述: 10 A, 60 V, NPN, Si, POWER TRANSISTOR
封装: PLASTIC, TO-220AB, 3 PIN
文件页数: 55/59页
文件大小: 357K
代理商: MJE3055TAN
Industry
Part Number
Motorola
Nearest
Replacement
Motorola
Similar
Replacement
Page
Number
Industry
Part Number
Motorola
Nearest
Replacement
Motorola
Similar
Replacement
Page
Number
1–31
Index and Cross Reference
Motorola Bipolar Power Transistor Device Data
INDEX AND CROSS REFERENCE (continued)
TIP73B
2N6488
3–132
TIP74
2N6490
3–132
TIP74A
2N6490
3–132
TIP74B
2N6491
3–132
TIP75
MJE13005
3–661
TIP75A
MJE13005
3–661
TIP75B
MJE13005
3–661
TIP75C
MJE13005
3–661
TIPL752
MJE16106
3–696
TIPL752A
MJE16106
3–696
TIPL753
MJE16106
3–696
TIPL753A
MJE16106
3–696
TIPL755
MJ16110
3–529
TIPL755A
MJ16010
3–512
TIPL760
MJE16002
3–688
TIPL760A
MJE16002
3–688
相关PDF资料
PDF描述
MJE2955TAJ 10 A, 60 V, PNP, Si, POWER TRANSISTOR
MJE2955TBV 10 A, 60 V, PNP, Si, POWER TRANSISTOR
MJE3055TBC 10 A, 60 V, NPN, Si, POWER TRANSISTOR
MJE2955TAU 10 A, 60 V, PNP, Si, POWER TRANSISTOR
MJE2955TAS 10 A, 60 V, PNP, Si, POWER TRANSISTOR
相关代理商/技术参数
参数描述
MJE3055TG 功能描述:两极晶体管 - BJT 10A 60V 125W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
MJE3055TG-TA3-T 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:HIGH VOLTAGE TRANSISTOR
MJE3055TG-TM3-T 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:HIGH VOLTAGE TRANSISTOR
MJE3055TG-TN3-R 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:HIGH VOLTAGE TRANSISTOR
MJE3055TL-TA3-T 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:HIGH VOLTAGE TRANSISTOR