参数资料
型号: MJE3055TAN
厂商: ON SEMICONDUCTOR
元件分类: 功率晶体管
英文描述: 10 A, 60 V, NPN, Si, POWER TRANSISTOR
封装: PLASTIC, TO-220AB, 3 PIN
文件页数: 6/59页
文件大小: 357K
代理商: MJE3055TAN
Selector Guide
2–14
Motorola Bipolar Power Transistor Device Data
Table 8. Metal TO–204AA (Formerly TO–3), TO–204AE (continued)
ICCont
Amps
Max
PD
(Case)
Watts
@ 25
°C
fT
MHz
Min
Resistive Switching
@ IC
Amp
hFE
Min/Max
Device Type
VCEO(sus)
Volts
Min(8)
ICCont
Amps
Max
PD
(Case)
Watts
@ 25
°C
fT
MHz
Min
@ IC
Amp
tf
s
Max
ts
s
Max
@ IC
Amp
hFE
Min/Max
PNP
NPN
VCEO(sus)
Volts
Min(8)
15
450/850
MJ16010
5 min
15
1.2 typ
0.2 typ
10
175
MJ16012
7 min
15
0.9 typ
0.15 typ
10
175
16
140
2N3773
2N6609
15/60
8
1.1 typ
1.5 typ
8
4
150
2N5631
2N6031
15/60
8
1.2 typ
8
1
200
MJ15022
MJ15023
15/60
8
5
250
MJ15024
MJ15025
15/60
8
5
250
MJ21194
MJ21193
25/75
8
4
250
20
60
2N3772
15/60
10
2
150
2N6282(2)
2N6285 (2)
750/18k
10
2.5 typ
10
4(1)
160
75
2N5039
20/100
10
1.5
0.5
10
60
140
80
2N6283 (2)
2N6286 (2)
750/18k
10
2.5 typ
10
4(1)
160
90
2N5038
20/100
12
1.5
0.5
12
60
140
100
2N6284 (2)
2N6287 (2)
750/18k
10
2.5 typ
10
4(1)
160
140
MJ15003
MJ15004
25/150
5
2
250
200
BUV11
10 min
12
1.8
0.4
12
8
150
350
MJ10000 (2)
40/400
10
3
1.8
10
10(1)
175
400
MJ10005 (2)
40/400
10
1.5
0.5
10
10(1)
175
MJ13333
10/60
5
4
0.7
10
175
500
MJ10009 (2)
30/300
10
2
0.6
10
8(1)
175
25
60
2N5885
2N5883
20/100
10
1
0.8
10
4
200
80
2N5886
2N5884
20/100
10
1
0.8
10
4
200
2N6436
30/120
10
1
0.25
10
40
200
100
2N6338
2N6437
30/120
10
1
0.25
10
40
200
120
2N6339
2N6438
30/120
10
1
0.25
10
40
200
140
2N6340
30/120
10
1
0.25
10
40
200
150
2N6341
30/120
10
1
0.25
10
40
200
30
40
2N3771
15/60
15
2
150
2N5301
2N4398
15/60
15
2
1
10
2
200
60
2N5302
2N4399
15/60
15
2
1
10
2
200
MJ11012(2)
MJ11011(2)
1k min
20
4(1)
200
90
MJ11014 (2)
MJ11013 (2)
1k min
20
4(1)
200
100
2N6328
6/30
30
3
200
MJ802
MJ4502
25/100
7.5
2
200
120
MJ11016 (2)
MJ11015 (2)
1k min
20
4(1)
200
(1)|hFE| @ 1 MHz
(2)Darlington
(8)When 2 voltages are given, the format is VCEO(sus)/VCES.
Devices listed in bold, italic are Motorola preferred devices.
相关PDF资料
PDF描述
MJE2955TAJ 10 A, 60 V, PNP, Si, POWER TRANSISTOR
MJE2955TBV 10 A, 60 V, PNP, Si, POWER TRANSISTOR
MJE3055TBC 10 A, 60 V, NPN, Si, POWER TRANSISTOR
MJE2955TAU 10 A, 60 V, PNP, Si, POWER TRANSISTOR
MJE2955TAS 10 A, 60 V, PNP, Si, POWER TRANSISTOR
相关代理商/技术参数
参数描述
MJE3055TG 功能描述:两极晶体管 - BJT 10A 60V 125W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
MJE3055TG-TA3-T 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:HIGH VOLTAGE TRANSISTOR
MJE3055TG-TM3-T 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:HIGH VOLTAGE TRANSISTOR
MJE3055TG-TN3-R 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:HIGH VOLTAGE TRANSISTOR
MJE3055TL-TA3-T 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:HIGH VOLTAGE TRANSISTOR