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参数资料
| 型号： | MJE5742AS |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 功率晶体管 |
| 英文描述： | 8 A, 400 V, NPN, Si, POWER TRANSISTOR |
| 封装： | PLASTIC, TO-220AB, 3 PIN |
| 文件页数： | 1/61页 |
| 文件大小： | 397K |
| 代理商： | MJE5742AS |
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3–640
Motorola Bipolar Power Transistor Device Data
NPN Silicon Power
Darlington Transistors
The MJE5740, 41, 42 Darlington transistors are designed for high–voltage power
switching in inductive circuits. They are particularly suited for operation in applications
such as:
Small Engine Ignition
Switching Regulators
Inverters
Solenoid and Relay Drivers
Motor Controls
MAXIMUM RATINGS
Rating
Symbol
MJE5740
MJE5741
MJE5742
Unit
Collector–Emitter Voltage
VCEO(sus)
300
350
400
Vdc
Collector–Emitter Voltage
VCEV
600
700
800
Vdc
Emitter Base Voltage
VEB
8
Vdc
Collector Current — Continuous
— Peak (1)
IC
ICM
8
16
Adc
Base Current — Continuous
— Peak (1)
IB
IBM
2.5
5
Adc
Total Power Dissipation
@ TA = 25_C
Derate above 25
_C
PD
2
16
Watts
mW/
_C
Total Power Dissipation
@ TC = 25_C
Derate above 25
_C
PD
80
640
Watts
mW/
_C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 65 to + 150
_C
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle = 10%.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θJC
1.56
_C/W
Thermal Resistance, Junction to Ambient
R
θJA
62.5
_C/W
Maximum Lead Temperature for Soldering
Purposes: 1/8
″ from Case for 5 Seconds
TL
275
_C
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS (2)
Collector–Emitter Sustaining Voltage
MJE5740
(IC = 50 mA, IB = 0)
MJE5741
MJE5742
VCEO(sus)
300
350
400
—
—
Vdc
Collector Cutoff Current (VCEV = Rated Value, VBE(off) = 1.5 Vdc)
(VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 100_C)
ICEV
—
—
1
5
mAdc
Emitter Cutoff Current (VEB = 8 Vdc, IC = 0)
IEBO
—
—
75
mAdc
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
IS/b
See Figure 6
Clamped Inductive SOA with Base Reverse Biased
RBSOA
See Figure 7
(2) Pulse Test: Pulse Width = 300
s, Duty Cycle = 2%.
(continued)
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MJE5740
MJE5741
MJE5742
POWER DARLINGTON
TRANSISTORS
8 AMPERES
300, 350, 400 VOLTS
80 WATTS
*Motorola Preferred Device
≈ 100
≈ 50
*
CASE 221A–06
TO–220AB
REV 1
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MJE5742G | 功能描述:达林顿晶体管 8A 400V Bipolar Power NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| MJE5850 | 功能描述:两极晶体管 - BJT 8A 300V 80W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJE5850_06 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:8 AMPERE PCP SILICON POWER TRANSISTORS 300 - 350 - 400 VOLTS 80 WATTS |
| MJE5850G | 功能描述:两极晶体管 - BJT 8A 300V 80W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJE5850G | 制造商:ON Semiconductor 功能描述:Bipolar Transistor |
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