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参数资料
| 型号： | MJF18008 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 功率晶体管 |
| 英文描述： | POWER TRANSISTOR |
| 中文描述： | 8 A, 450 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封装： | CASE 221D-03, ISOLATED TO-220, FULL PACK-3 |
| 文件页数： | 4/10页 |
| 文件大小： | 421K |
| 代理商： | MJF18008 |
4
Motorola Bipolar Power Transistor Device Data
Figure 7. Resistive Switching, ton
Figure 8. Resistive Switching, toff
IC, COLLECTOR CURRENT (AMPS)
IC COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
0
1500
IC, COLLECTOR CURRENT (AMPS)
t
Figure 9. Inductive Storage Time, tsi
Figure 10. Inductive Storage Time, tsi(hFE)
Figure 11. Inductive Switching, tc and tfi
IC/IB = 5
Figure 12. Inductive Switching, tc and tfi
IC/IB = 10
1000
0
4
8
2000
0
3500
3
hFE, FORCED GAIN
6
400
50
0
IC, COLLECTOR CURRENT (AMPS)
4
8
250
200
50
2000
0
12
15
300
150
2
2
5
8
IC/IB = 5
t
200
150
100
6
500
IC/IB = 10
4
8
2
6
500
1000
1500
2500
3000
3500
t
t
1
3
4
6
7
1000
1500
2500
9
5000
2000
0
500
1000
1500
2500
3000
3500
1
2
3
5
t
4
7
8
1
2
3
5
6
t
1
3
5
7
1
3
5
7
500
3000
4
5
7
8
10
11
13
14
250
100
IC/IB = 10
IB(off) = IC/2
VCC = 15 V
VZ = 300 V
LC = 200
μ
H
4000
4500
300
350
IB(off) = IC/2
VCC = 300 V
PW = 20
μ
s
IC/IB = 5
IC/IB = 10
TJ = 125
°
C
TJ = 25
°
C
4500
4000
IC/IB = 5
IB(off) = IC/2
VCC = 15 V
VZ = 300 V
LC = 200
μ
H
IC = 2 A
IB(off) = IC/2
VCC = 15 V
VZ = 300 V
LC = 200
μ
H
6
7
tfi
tc
tfi
tc
TJ = 25
°
C
TJ = 125
°
C
TYPICAL SWITCHING CHARACTERISTICS
(IB2 = IC/2 for all switching)
IC = 4.5 A
IB(off) = IC/2
VCC = 15 V
VZ = 300 V
LC = 200
μ
H
IB(off) = IC/2
VCC = 300 V
PW = 20
μ
s
TJ = 25
°
C
TJ = 125
°
C
TJ = 25
°
C
TJ = 125
°
C
TJ = 25
°
C
TJ = 125
°
C
TJ = 25
°
C
TJ = 125
°
C
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| MJF2955 | 功能描述:两极晶体管 - BJT 10A 90V 30W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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