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参数资料
| 型号： | MJF18009 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 功率晶体管 |
| 英文描述： | POWER TRANSISTORS |
| 中文描述： | 10 A, 450 V, NPN, Si, POWER TRANSISTOR, TO-220 |
| 封装： | ISOLATED TO-220, 3 PIN |
| 文件页数： | 5/10页 |
| 文件大小： | 433K |
| 代理商： | MJF18009 |
5
Motorola Bipolar Power Transistor Device Data
t
TYPICAL SWITCHING CHARACTERISTICS
Figure 7. Resistive Switching, ton
2
0
10
4
1
IC, COLLECTOR CURRENT (AMPS)
7
1
IC/IB = 10
IC/IB = 5
IBoff = IC/2
VCC = 300 V
PW = 20
μ
s
Figure 8. Resistive Switching, toff
5
2
0
10
7
1
IC, COLLECTOR CURRENT (AMPS)
Figure 9. Inductive Storage Time, tsi
5
2
0
10
3
1
IC, COLLECTOR CURRENT (AMPS)
5
3
1
3
t
μ
4
1
TJ = 125
°
C
TJ = 25
°
C
IC/IB = 10
IC/IB = 5
IBoff = IC/2
VCC = 300 V
PW = 20
μ
s
4
TJ = 125
°
C
TJ = 25
°
C
IBoff = IC/2
VCC = 15 V
VZ = 300 V
LC = 200
μ
H
Figure 10. Inductive Storage Time
4
IC/IB = 5
6
2
0
15
7
3
hFE, FORCED GAIN
13
4
1
9
TJ = 125
°
C
TJ = 25
°
C
Figure 11. Inductive Switching,
tc & tfi @ IC/IB = 5
350
100
11
3
1
IC, COLLECTOR CURRENT (AMPS)
7
t
300
250
150
TJ = 125
°
C
TJ = 25
°
C
200
5
Figure 12. Inductive Switching,
tc & tfi @ IC/IB = 10
300
0
IC, COLLECTOR CURRENT (AMPS)
t
200
100
TJ = 125
°
C
TJ = 25
°
C
t
μ
TJ = 125
°
C
TJ = 25
°
C
4
2
7
9
8
6
IC/IB = 10
,
t
μ
s
5
3
5
11
IBoff = IC/2
VCC = 15 V
VZ = 300 V
LC = 200
μ
H
IC = 3 A
IC = 6.5 A
9
IBoff = IC/2
VCC = 15 V
VZ = 300 V
LC = 200
μ
H
tc
tfi
10
3
1
5
4
2
7
9
8
6
IBoff = IC/2
VCC = 15 V
VZ = 300 V
LC = 200
μ
H
tc
tfi
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