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参数资料
| 型号： | MJH10012 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | 10 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-218 |
| 文件页数： | 1/6页 |
| 文件大小： | 191K |
| 代理商： | MJH10012 |
1
Motorola Bipolar Power Transistor Device Data
NPN Silicon Power Darlington
Transistor
The MJ10012 and MJH10012 are high–voltage, high–current Darlington transistors
designed for automotive ignition, switching regulator and motor control applications.
Collector–Emitter Sustaining Voltage —
VCEO(sus) = 400 Vdc (Min)
175 Watts Capability at 50 Volts
Automotive Functional Tests
MAXIMUM RATINGS
Rating
Symbol
MJ10012
MJH10012
Unit
Collector–Emitter Voltage
VCEO
400
Vdc
Collector–Emitter Voltage
(RBE = 27 )
VCER
550
Vdc
Collector–Base Voltage
VCBO
600
Vdc
Emitter–Base Voltage
VEBO
8.0
Vdc
Collector Current — Continuous
— Peak (1)
IC
10
15
Adc
Base Current
IB
2.0
Adc
Total Power Dissipation
@ TC = 25_C
@ TC = 100_C
Derate above 25
_C
PD
175
100
1.0
118
47.5
1.05
Watts
W/
_C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 65 to + 200
– 55 to + 150
_C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θJC
1.0
0.95
_C/W
Maximum Lead Temperature for
Soldering Purposes: 1/8
″ from
Case for 5 Seconds
TL
275
275
_C
(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle
v 10%.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJ10012/D
Motorola, Inc. 1995
MJ10012
MJH10012
10 AMPERE
POWER TRANSISTORS
DARLINGTON NPN
SILICON
400 VOLTS
175 AND 118 WATTS
CASE 1–07
TO–204AA
(TO–3)
MJ10012
CASE 340D–01
TO–218 TYPE
MJH10012
≈ 1 k
≈ 30
EMITTER
BASE
COLLECTOR
REV 2
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MJH11017 | 功能描述:达林顿晶体管 15A 150V Bipolar RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| MJH11017_06 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:15 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 150−250 VOLTS, 150 WATTS |
| MJH11017G | 功能描述:达林顿晶体管 15A 150V Bipolar Power PNP RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| MJH11018 | 功能描述:达林顿晶体管 15A 150V Bipolar RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| MJH11018G | 功能描述:达林顿晶体管 20A 150V Bipolar Power NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
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