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参数资料
| 型号： | MJH10012 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | 10 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-218 |
| 文件页数： | 2/6页 |
| 文件大小： | 191K |
| 代理商： | MJH10012 |
MJ10012 MJH10012
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS (1)
Collector–Emitter Sustaining Voltage (Figure 1)
(IC = 200 mAdc, IB = 0, Vclamp = Rated VCEO)
VCEO(sus)
400
—
—
Vdc
Collector–Emitter Sustaining Voltage (Figure 1)
(IC = 200 mAdc, RBE = 27 Ohms, Vclamp = Rated VCER)
VCER(sus)
425
—
—
Vdc
Collector Cutoff Current (Rated VCER, RBE = 27 Ohms)
ICER
—
—
1.0
mAdc
Collector Cutoff Current (Rated VCBO, IE = 0)
ICBO
—
—
1.0
mAdc
Emitter Cutoff Current (VEB = 6.0 Vdc, IC = 0)
IEBO
—
—
40
mAdc
ON CHARACTERISTICS (1)
DC Current Gain
(IC = 3.0 Adc, VCE = 6 0 Vdc)
(IC = 6.0 Adc, VCE = 6.0 Vdc)
(IC = 10 Adc, VCE = 6.0 Vdc)
hFE
300
100
20
550
350
150
—
2000
—
—
Collector–Emitter Saturation Voltage
(IC = 3.0 Adc, IB = 0.6 Adc)
(IC = 6.0 Adc, IB = 0.6 Adc)
(IC = 10 Adc, IB = 2.0 Adc)
VCE(sat)
—
—
1 5
2.0
2.5
Vdc
Base Emitter Saturation Voltage
(IC = 6.0 Adc, IB = 0.6 Adc)
(IC = 10 Adc, IB = 2.0 Adc)
VBE(sat)
—
—
2.5
3.0
Vdc
Base Emitter On Voltage (IC = 10 Adc, VCE = 6.0 Vdc)
VBE(on)
—
—
2.8
Vdc
Diode Forward Voltage (IF = 10 Adc)
Vf
—
2.0
3.5
Vdc
DYNAMIC CHARACTERISTICS
Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 100 kHz)
Cob
—
165
350
pF
SWITCHING CHARACTERISTICS
Storage Time
(VCC = 12 Vdc, IC = 6.0 Adc,
IB1 = IB2 = 0.3 Adc) Figure 2
ts
—
7 5
15
s
Fall Time
(VCC = 12 Vdc, IC = 6.0 Adc,
IB1 = IB2 = 0.3 Adc) Figure 2
tf
—
5.2
15
s
FUNCTIONAL TESTS
Second Breakdown Collector Current with
Base–Forward Biased
IS/B
See Figure 10
—
Pulsed Energy Test (See Figure 12)
IC2L/2
—
—
180
mJ
(1) Pulse Test: Pulse Width = 300
s, Duty Cycle = 2%.
Vclamp
VCEO
25
s
10 V
VCC [ 14 V
ADJUST UNTIL IC = 6 A
VCEO(sus) = 400 Vdc
VCER(sus) = 425 Vdc
VCC = 20 Vdc
Figure 1. Sustaining Voltage
Test Circuit
Figure 2. Switching Times
Test Circuit
* Adjust t1 such that IC reaches 200 mA at VCE = Vclamp
0 V
*
t1
5 ms
220
100
1N4933
2N3713
L = 10 mH
VCER
27
Vclamp
2
Eo
T.U.T.
– 4 V
[ 12 V
En
51
1N3947
225
s
[ 12 V
0
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