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参数资料
| 型号： | MJW21195 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 功率晶体管 |
| 英文描述： | Silicon Power Transistors |
| 中文描述： | 16 A, 250 V, PNP, Si, POWER TRANSISTOR, TO-247AD |
| 封装： | CASE 340L-02, TO-247, 3 PIN |
| 文件页数： | 1/8页 |
| 文件大小： | 91K |
| 代理商： | MJW21195 |
Semiconductor Components Industries, LLC, 2002
March, 2002 – Rev. 1
1
Publication Order Number:
MJW21195/D
MJW21195 (PNP)
MJW21196 (NPN)
Preferred Devices
Silicon Power Transistors
The MJW21195 and MJW21196 utilize Perforated Emitter
technology and are specifically designed for high power audio output,
disk head positioners and linear applications.
Total Harmonic Distortion Characterized
High DC Current Gain –
hFE = 20 Min @ IC = 8 Adc
Excellent Gain Linearity
High SOA: 2.25 A, 80 V, 1 Second
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
VCBO
VEBO
VCEX
IC
250
Vdc
Collector–Base Voltage
400
Vdc
Emitter–Base Voltage
5.0
Vdc
Collector–Emitter Voltage – 1.5 V
400
Vdc
Collector Current – Continuous
Collector Current
–
Peak (Note 1)
16
30
Adc
Base Current – Continuous
IB
PD
5.0
Adc
Total Power Dissipation @ TC = 25
°
C
Derate Above 25
°
C
200
1.43
Watts
W/
°
C
Operating and Storage Junction
Temperature Range
TJ, Tstg
–65 to
+150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance,
Junction to Case
R
θ
JC
0.7
°
C/W
Thermal Resistance,
Junction to Ambient
R
θ
JA
40
°
C/W
1. Pulse Test: Pulse Width = 5 s, Duty Cycle
≤
10%.
Device
Package
Shipping
ORDERING INFORMATION
MJW21195
TO–247
http://onsemi.com
TO–247
CASE 340K
STYLE 3
30 Units/Rail
2
1
16 AMPERES
COMPLEMENTARY
SILICON POWER
TRANSISTORS
250 VOLTS
200 WATTS
3
MARKING DIAGRAM
MJW
2119x
LLYWW
MJW2119x= Device Code
x
= 5 or 6
LL
= Location Code
Y
= Year
WW
= Work Week
Preferred
devices are recommended choices for future use
and best overall value.
MJW21196
TO–247
30 Units/Rail
1 BASE
2 COLLECTOR
3 EMITTER
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MJW21195_06 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:16 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS, 200 WATTS |
| MJW21195_10 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Silicon Power Transistors |
| MJW21195G | 功能描述:两极晶体管 - BJT 16A 250V 200W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJW21196 | 功能描述:两极晶体管 - BJT 16A 250V 200W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJW21196G | 功能描述:两极晶体管 - BJT 16A 250V 200W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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