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参数资料
| 型号： | MKI100-12F8 |
| 厂商： | IXYS |
| 文件页数： | 1/2页 |
| 文件大小： | 0K |
| 描述： | MOD IGBT H-BRIDGE 1200V 125A E3 |
| 标准包装： | 5 |
| IGBT 类型： | NPT |
| 配置： | 全桥反相器 |
| 电压 - 集电极发射极击穿（最大）： | 1200V |
| Vge, Ic时的最大Vce（开）： | 3.9V @ 15V，100A |
| 电流 - 集电极 (Ic)（最大）： | 125A |
| 电流 - 集电极截止（最大）： | 1.3mA |
| Vce 时的输入电容 (Cies)： | 6.5nF @ 25V |
| 功率 - 最大： | 640W |
| 输入： | 标准 |
| NTC 热敏电阻： | 无 |
| 安装类型： | 底座安装 |
| 封装/外壳： | E3 |
| 供应商设备封装： | E3 |
Advanced Technical Information
MKI 100-12F8
IGBT Modules
I C25
= 125 A
V CES
H Bridge
Short Circuit SOA Capability
Square RBSOA
13, 21
1
9
= 1200 V
V CE(sat) typ. = 3.3 V
2
3
4
10
11
12
19
15
14, 20
MKI
IGBTs
Features
? Fast NPT IGBTs
Symbol
Conditions
Maximum Ratings
- low saturation voltage
V CES
V GES
I C25
I C80
I CM
V CEK
t SC
T VJ = 25°C to 150°C
T C = 25°C
T C = 80°C
V GE = ± 15 V; R G = 5.6 ? ; T VJ = 125°C
RBSOA; clamped inductive load; L = 100 μH
V CE = 900 V; V GE = ± 15 V; R G = 5.6 ? ; T VJ = 125°C
SCSOA; non-repetitive
1200
± 20
125
85
200
V CES
10
V
V
A
A
A
μs
- positive temperature coefficient for
easy paralleling
- fast switching
- short tail current for optimized
performance also in resonant circuits
? HiPerFRED TM diode:
- fast reverse recovery
- low operating forward voltage
- low leakage current
? Industry Standard Package
- solderable pins for PCB mounting
- isolated copper base plate
P tot
T C = 25°C
640
W
Typical Applications
Symbol
Conditions
Characteristic Values
(T VJ = 25 ° C, unless otherwise specified)
min. typ. max.
- motor control
. DC motor amature winding
V CE(sat)
V GE(th)
I C = 100 A; V GE = 15 V; T VJ = 25°C
T VJ = 125°C
I C = 4 mA; V GE = V CE
4.5
3.3
4.0
3.9
6.5
V
V
V
. DC motor excitation winding
. synchronous motor excitation winding
- supply of transformer primary winding
. power supplies
I CES
I GES
V CE = V CES ; V GE = 0 V;
V CE = 0 V; V GE = ± 20 V
T VJ = 25°C
T VJ = 125°C
4.0
1.3
600
mA
mA
nA
. welding
. X-ray
. battery charger
t d(on)
130
ns
t r
t d(off)
t f
E on
E off
C ies
Q Gon
R thJC
Inductive load, T VJ = 125°C
V CE = 600 V; I C = 100 A
V GE = ±15 V; R G = 5.6 ?
V CE = 25 V; V GE = 0 V; f = 1 MHz
V CE = 600 V; V GE = ± 15 V; I C = 100 A
(per IGBT)
60
365
30
12.0
5.0
6.5
1.1
ns
ns
ns
mJ
mJ
nF
μC
0.19 K/W
IXYS reserves the right to change limits, test conditions and dimensions.
? 2004 IXYS All rights reserved
1-2
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