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参数资料
| 型号： | MKI65-06A7 |
| 厂商： | IXYS CORP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 100 A, 600 V, N-CHANNEL IGBT |
| 封装： | MODUL-14 |
| 文件页数： | 1/2页 |
| 文件大小： | 66K |
| 代理商： | MKI65-06A7 |
2005 IXYS All rights reserved
1 - 2
B3
0548
MKI 65-06 A7
MKI 65-06 A7T
IXYS reserves the right to change limits, test conditions and dimensions.
Features
NPT IGBT technology
low saturation voltage
low switching losses
switching frequency up to 30 kHz
square RBSOA, no latch up
high short circuit capability
positive temperature coefficient for
easy parallelling
MOS input, voltage controlled
ultra fast free wheeling diodes
solderable pins for PCB mounting
package with copper base plate
UL registered, E 72873
Advantages
space savings
reduced protection circuits
package designed for wave soldering
Typical Applications
motor control
- DC motor armature winding
- DC motor excitation winding
- synchronous motor excitation winding
supply of transformer primary winding
- power supplies
- welding
- X-ray
- UPS
- battery charger
IGBTs
Symbol
Conditions
Maximum Ratings
V
CES
T
VJ = 25°C to 150°C
600
V
V
GES
± 20
V
I
C25
T
C =
25°C
100
A
I
C80
T
C =
80°C
67
A
RBSOA
V
GE = ±15 V; RG = 15 ; TVJ = 125°C
I
CM
= 150
A
Clamped inductive load; L = 100 H
V
CEK
≤ V
CES
t
SC
V
CE = VCES; VGE = ±15 V; RG = 15 ; TVJ = 125°C
10
s
(SCSOA)
non-repetitive
P
tot
T
C = 25°C
320
W
Symbol
Conditions
Characteristic Values
(T
VJ = 25°C, unless otherwise specified)
min.
typ.
max.
V
CE(sat)
I
C = 65 A; VGE = 15 V; TVJ =
25°C
2.0
2.5
V
T
VJ = 125°C
2.5
V
V
GE(th)
I
C = 1.5 mA; VGE = VCE
4.5
6.5
V
I
CES
V
CE = VCES; VGE = 0 V; TVJ =
25°C
0.8
mA
T
VJ = 125°C
0.8
mA
I
GES
V
CE = 0 V; VGE = ± 20 V
200
nA
t
d(on)
150
ns
t
r
60
ns
t
d(off)
450
ns
t
f
40
ns
E
on
3.5
mJ
E
off
2.3
mJ
C
ies
V
CE = 25 V; VGE = 0 V; f = 1 MHz
4200
pF
Q
Gon
V
CE = 300V; VGE = 15 V; IC = 100 A
260
nC
R
thJC
(per IGBT)
0.39 K/W
Inductive load, T
VJ = 125°C
V
CE = 300 V; IC = 65 A
V
GE = ±15 V; RG = 15
I
C25
= 100 A
V
CES
= 600 V
V
CE(sat) typ = 2.0 V
IGBT Modules
H-Bridge
Short Circuit SOA Capability
Square RBSOA
13
1
2
3
4
17
9
10
11
12
16
14
D1
D2
D5
D6
T1
T2
T5
T6
T
Type:
NTC - Option:
MKI 65-06 A7
without NTC
MKI 65-06 A7T
with NTC
Preliminary data
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| MKI80-06T6K | 功能描述:IGBT 模块 80 Amps 600V RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装: |
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