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参数资料
| 型号： | MKP3V240RLG |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | SIDAC BIDIRECT 1A 240V DO-201AD |
| 标准包装： | 1 |
| 电流 - 峰值输出： | 1A |
| 电压 - 击穿： | 220 ~ 250V |
| 电流 - 维持(Ih)： | 100mA |
| 电流 - 击穿： | 200µA |
| 封装/外壳： | DO-201AD，轴向 |
| 供应商设备封装： | 轴向 |
| 包装： | 剪切带 (CT) |
| 其它名称： | MKP3V240RLGOSCT |
MKP3V120, MKP3V240
ELECTRICAL CHARACTERISTICS (T C = 25 ° C unless otherwise noted ; Electricals apply in both directions)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Repetitive Peak Off ? State Current
(50 to 60 Hz Sine Wave)
V DRM = 90 V
V DRM = 180 V
MKP3V120
MKP3V240
I DRM
?
?
10
m A
ON CHARACTERISTICS
Breakover Voltage, I BO = 200 m A
Breakover Current
Peak On ? State Voltage
(I TM = 1 A Peak, Pulse Width ≤ 300 m s, Duty Cycle ≤ 2%)
Dynamic Holding Current
(Sine Wave, 60 Hz, R L = 100 W )
Switching Resistance
(Sine Wave, 50 to 60 Hz)
MKP3V120
MKP3V240
V BO
I BO
V TM
I H
R S
110
220
?
?
?
0.1
?
?
?
1.1
?
?
130
250
200
1.5
100
?
V
m A
V
mA
k W
DYNAMIC CHARACTERISTICS
Critical Rate ? of ? Rise of On ? State Current,
Critical Damped Waveform Circuit
(I PK = 130 W , Pulse Width = 10 m sec)
di/dt
?
120
?
A/ m s
Voltage Current Characteristic of SIDAC
(Bidirectional Device)
+ Current
Symbol
I DRM
Parameter
Off State Leakage Current
I TM
I H
V TM
Slope = R S
V DRM
V BO
I BO
I H
V TM
I TM
Off State Repetitive Blocking Voltage
Breakover Voltage
Breakover Current
Holding Current
On State Voltage
Peak on State Current
I DRM
V DRM
V S
I S
V (BO)
I (BO)
+ Voltage
http://onsemi.com
2
R S +
(V (BO) – V S )
(I S – I (BO) )
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