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参数资料
| 型号： | MKP3V240RLG |
| 厂商： | ON Semiconductor |
| 文件页数： | 4/5页 |
| 文件大小： | 0K |
| 描述： | SIDAC BIDIRECT 1A 240V DO-201AD |
| 标准包装： | 1 |
| 电流 - 峰值输出： | 1A |
| 电压 - 击穿： | 220 ~ 250V |
| 电流 - 维持(Ih)： | 100mA |
| 电流 - 击穿： | 200µA |
| 封装/外壳： | DO-201AD，轴向 |
| 供应商设备封装： | 轴向 |
| 包装： | 剪切带 (CT) |
| 其它名称： | MKP3V240RLGOSCT |
MKP3V120, MKP3V240
THERMAL CHARACTERISTICS
1.0
0.5
0.3
0.2
0.1
0.05
0.03
0.02
0.01
Z q JL (t) = R q JL ? r(t)
D T JL = P pk R q JL [r(t)]
where: t p TIME
D T JL = the increase in junction temperature above the
lead temperature
r(t) = normalized value of transient thermal resistance at
time, t from this figure. For example,
r(t p ) = normalized value of
transient resistance at time t p .
LEAD LENGTH = 1 / 4 ″
The temperature of the lead should be
measured using a thermocouple placed on the
lead as close as possible to the tie point. The
thermal mass connected to the tie point is
normally large enough so that it will not
significantly respond to heat surges generated
in the diode as a result of pulsed operation
once steady-state conditions are achieved.
Using the measured value of T L , the junction
temperature may be determined by:
T J = T L + D T JL
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
500
1.0 k
2.0 k
5.0 k
10 k
20 k
t, TIME (ms)
Figure 5. Thermal Response
TYPICAL CHARACTERISTICS
100
90
80
70
60
50
40
30
20
10
0
250
225
200
175
150
125
100
75
50
25
0
-60
-40
-20
0
20
40
60
80
100
120
140
-60
-40
-20
0
20
40
60
80
100
120 140
T J , JUNCTION TEMPERATURE ( ° C)
Figure 6. Typical Breakover Current
http://onsemi.com
4
T J , JUNCTION TEMPERATURE ( ° C)
Figure 7. Typical Holding Current
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